N-Channel 650 V 34.6A (Tc) 313W (Tc) Through Hole PG-TO247-3-1
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SPW35N60C3FKSA1

DigiKey Part Number
SPW35N60C3FKSA1-ND
Manufacturer
Manufacturer Product Number
SPW35N60C3FKSA1
Description
MOSFET N-CH 650V 34.6A TO247-3
Customer Reference
Detailed Description
N-Channel 650 V 34.6A (Tc) 313W (Tc) Through Hole PG-TO247-3-1
Datasheet
 Datasheet
EDA/CAD Models
SPW35N60C3FKSA1 Models
Product Attributes
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Category
Vgs(th) (Max) @ Id
3.9V @ 1.9mA
Mfr
Gate Charge (Qg) (Max) @ Vgs
200 nC @ 10 V
Series
Vgs (Max)
±20V
Packaging
Tube
Input Capacitance (Ciss) (Max) @ Vds
4500 pF @ 25 V
Part Status
Not For New Designs
Power Dissipation (Max)
313W (Tc)
FET Type
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
650 V
Supplier Device Package
PG-TO247-3-1
Current - Continuous Drain (Id) @ 25°C
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
Rds On (Max) @ Id, Vgs
100mOhm @ 21.9A, 10V
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (15)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
SIHG44N65EF-GE3Vishay Siliconix0SIHG44N65EF-GE3-ND$8.32232Direct
FCH077N65F-F085onsemi1,646FCH077N65F-F085-ND$16.24000Similar
FCH077N65F-F155onsemi17FCH077N65F-F155-ND$15.13000Similar
IXFH36N60PIXYS510IXFH36N60P-ND$21.85000Similar
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In-Stock: 240
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Not recommended for new design, minimums may apply View Substitutes
All prices are in SGD
Tube
QuantityUnit PriceExt Price
1$16.80000$16.80
30$9.92167$297.65
120$8.41200$1,009.44
510$7.30643$3,726.28
1,020$6.90327$7,041.34
2,010$6.57131$13,208.33
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:$16.80000
Unit Price with VAT:$18.31200