N-Channel 650 V 21A (Tc) 208W (Tc) Surface Mount TO-263 (D2PAK)
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SIHB21N65EF-GE3

DigiKey Part Number
SIHB21N65EF-GE3-ND
Manufacturer
Vishay Siliconix
Manufacturer Product Number
SIHB21N65EF-GE3
Description
MOSFET N-CH 650V 21A D2PAK
Manufacturer Standard Lead Time
28 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 21A (Tc) 208W (Tc) Surface Mount TO-263 (D2PAK)
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Vishay Siliconix
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
106 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2322 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
208W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
SIHB21
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In-Stock: 92
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Quantity
All prices are in SGD
Tube
QuantityUnit PriceExt Price
1$8.65000$8.65
50$4.56120$228.06
100$4.16640$416.64
500$3.47506$1,737.53
1,000$3.25312$3,253.12
2,000$3.13068$6,261.36
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:$8.65000
Unit Price with VAT:$9.42850