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2N6798 | |
|---|---|
DigiKey Part Number | 150-2N6798-ND |
Manufacturer | Microsemi Corporation |
Manufacturer Product Number | 2N6798 |
Description | MOSFET N-CH 200V 5.5A TO39 |
Customer Reference | |
Detailed Description | N-Channel 200 V 5.5A (Tc) 800mW (Ta), 25W (Tc) Through Hole TO-39 |
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Category | Rds On (Max) @ Id, Vgs 400mOhm @ 3.5A, 10V |
Mfr | Vgs(th) (Max) @ Id 4V @ 250µA |
Packaging Bulk | Gate Charge (Qg) (Max) @ Vgs 5.29 nC @ 10 V |
Part Status Obsolete | Vgs (Max) ±20V |
FET Type | Power Dissipation (Max) 800mW (Ta), 25W (Tc) |
Technology | Operating Temperature -55°C ~ 150°C (TJ) |
Drain to Source Voltage (Vdss) 200 V | Mounting Type Through Hole |
Current - Continuous Drain (Id) @ 25°C | Supplier Device Package TO-39 |
Drive Voltage (Max Rds On, Min Rds On) 10V | Package / Case |
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