FGY100T120RWD/FGY75T120SWD IGBTs

Product Highlights > FGY100T120RWD/FGY75T120SWD IGBTs

            FGY100T120RWD/FGY75T120SWD IGBTs
                    onsemi’s 1200 V IGBTs in power TO247-3L packages feature a positive temperature coefficient and +175°C TJ
    

onsemi’s FGY100T120RWD and FGY75T120SWD use the novel field stop 7th generation IGBT technology and a Gen7 diode in a TP247 3-lead package.

The FGY100T120RWD 100 A trench field stop VII (FS7) discrete IGBT offers optimum performance with low conduction losses and good switching controllability for high-efficiency operation in various applications like motor controls, UPS, data centers, and high power switches.

The FGY75T120SWD 75 A FS7 discrete IGBT offers optimum performance with low switching and conduction losses for high-efficiency operation in applications like solar, UPS, and energy storage systems (ESS).

Features

V_CES: 1200 V
Maximum junction temperature (T_J) = +175°C
Positive temperature coefficient
RoHS compliant
FGY100T120RWD
- Low conduction loss and optimized switching
- 100% of the parts are dynamically tested
- Short circuit rated
FGY75T120SWD
- Low switching loss
- Smooth and optimized switching

Applications

FGY100T120RWD
- Motor controls
- UPS
- Data centers
- General applications requiring high-power switches
FGY75T120SWD
- Boost and inverter in solar systems
- UPS
- ESS