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Silicon Carbide N-Channel MOSFETs
Central Semiconductor high-performance 1,700 V SiC MOSFETs are optimized for efficient, reliable EV and power electronics applications
Central Semiconductor N-channel silicon carbide MOSFETs are designed for high-speed switching and fast reverse-recovery applications.
Features
- Ultra-low on-resistance for minimized conduction losses and higher energy efficiency
- Low-input capacitance for high-speed, frequency-sensitive switching
- Excellent thermal stability with operating junction up to +175°C
- High 1,700 V blocking voltage in a TO-247 package for versatile power and battery system applications
- Optimized for efficient, cost-effective EV power electronics
Applications
- EV charging
Silicon Carbide N-Channel MOSFETs
| Image | Manufacturer Part Number | Description | Available Quantity | Price | View Details | |
|---|---|---|---|---|---|---|
 |  | CDMS24720-170 SL | 1700V THROUGH-HOLE MOSFET N-CHAN | 25 - Immediate | $120.81 | View Details |
| | CDMS24740-170 SL | 1700V THROUGH-HOLE MOSFET N-CHAN | 24 - Immediate | $48.73 | View Details |
| | CDMS24780-170 SL | 1700V THROUGH-HOLE MOSFET N-CHAN | 0 - Immediate | $36.94 | View Details |
| | CDMS24760-170 SL | 1700V THROUGH-HOLE MOSFET N-CHAN | 0 - Immediate | $42.18 | View Details |
Published: 2025-11-19
Singapore