AEM Central Semiconductor

Silicon Carbide N-Channel MOSFETs

Central Semiconductor high-performance 1,700 V SiC MOSFETs are optimized for efficient, reliable EV and power electronics applications

Image of Central Semiconductor Silicone Carbide N-Channel MOSFETCentral Semiconductor N-channel silicon carbide MOSFETs are designed for high-speed switching and fast reverse-recovery applications.

Features
  • Ultra-low on-resistance for minimized conduction losses and higher energy efficiency
  • Low-input capacitance for high-speed, frequency-sensitive switching
  • Excellent thermal stability with operating junction up to +175°C
  • High 1,700 V blocking voltage in a TO-247 package for versatile power and battery system applications
  • Optimized for efficient, cost-effective EV power electronics
Applications
  • EV charging
Published: 2025-11-19