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MDmesh™ V Power MOSFETs
STMicroelectronics' MDmesh™ V eclipses previous record for lowest RDS(on)
STMicroelectronics' MDmesh™ V Power MOSFET portfolio offers a broad range of breakdown voltages from -500 V to 1500 V, with low gate charge and low on-resistance, combined with state-of-the-art packaging. STMicroelectronics' process technology for both high-voltage and low-voltage MOSFETs has enhanced power handling capability, resulting in high-efficiency solutions.
- -500 V to 1500 V breakdown voltage range
- World's best RDS(on) area for 650 V power MOSFETs (0.029 Ω in the TO-247 package)
- Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements
- Intrinsic, fast body diode option for select product lines
MDmesh V Power MOSFETs
| Image | Manufacturer Part Number | Description | Available Quantity | Price | ||
|---|---|---|---|---|---|---|
 |  | STW88N65M5 | MOSFET N-CH 650V 84A TO247-3 | 452 - Immediate | $22.83 | View Details |
|  | STD18N65M5 | MOSFET N-CH 650V 15A DPAK | 2066 - Immediate | $4.86 | View Details |
|  | STL57N65M5 | MOSFET N-CH 650V 4.3A 8POWERFLAT | 6231 - Immediate | $16.75 | View Details |
|  | STY145N65M5 | MOSFET N-CH 650V 138A MAX247 | 38 - Immediate | $48.97 | View Details |
Published: 2013-06-14
Singapore