MasterGaN Series Integrated GaN Power Solutions for Next‑Generation Designs

The STMicroelectronics MasterGaN series delivers an advanced power system in package (SiP) solution that integrates a gate driver with two enhancement‑mode GaN transistors in a half‑bridge configuration. Built with robust 600 V GaN high electron‑mobility transistors (HEMTs), the series harnesses the advantages of GaN technology to enable higher conversion efficiency, reduced size, and significantly increased power density.

Optimized for resonant topologies, the MasterGaN‑L family is engineered for lower power consumption and faster turn‑on times (TON), making it well‑suited for high‑frequency switching applications that demand minimal no‑load power dissipation.