VideoLibrary

Using GaN FETs in 80 plus titanium power supply units

Industrial power supply units come in different shapes and sizes, but one commonality is the need to be safe and efficient. To ensure maximum efficiency is met designers are looking to power GaN FETs.

1/20/2025 10:23:21 PM

Part List

图片制造商零件编号描述可供货数量价格查看详情
650 V, 80 MOHM GALLIUM NITRIDE (GAN080-650EBEZ650 V, 80 MOHM GALLIUM NITRIDE (2238 - 立即发货$10.60查看详情
650 V, 140 MOHM GALLIUM NITRIDEGAN140-650FBEZ650 V, 140 MOHM GALLIUM NITRIDE1977 - 立即发货$10.23查看详情
650 V, 140 MOHM GALLIUM NITRIDEGAN140-650EBEZ650 V, 140 MOHM GALLIUM NITRIDE2365 - 立即发货$11.08查看详情
650 V, 190 MOHM GALLIUM NITRIDEGAN190-650EBEZ650 V, 190 MOHM GALLIUM NITRIDE945 - 立即发货$7.93查看详情
650 V, 190 MOHM GALLIUM NITRIDEGAN190-650FBEZ650 V, 190 MOHM GALLIUM NITRIDE1393 - 立即发货$7.32查看详情

Related Videos

Driving Power GaN FETs in Power Supply Units (PSU’s): Layout Insights
Driving Power GaN FETs in Power Supply Units (PSU’s): Layout Insights

发布日期：2025-04-10

Boost motor control efficiency with Nexperia e-mode technology
Boost motor control efficiency with Nexperia e-mode technology

发布日期：2025-04-09

E-mode GaN FET portfolio expansion
E-mode GaN FET portfolio expansion

发布日期：2025-04-09

Related Product Highlight

增强模式 GaN FET Nexperia 增强模式 GaN FET 提供卓越的开关性能、更高的 AC/DC 和 DC/AC 电源转换效率，并显著节省空间和 BOM。

Related Articles and Blogs

半导体材料在电源领域的应用与发展趋势 随着全球对高效能电源转换技术的需求不断提升，半导体材料在电源领域的应用日益重要。从传统的硅（Si）功率元器件，到近年来快速崛起的宽带隙半导体材料——碳化硅（SiC）与氮化镓（GaN），这些技术的进步正在驱动电源转换技术向更高效、更高功率密度、更低损耗的方向发展，使得电源系统能够在更小的体积内达成更高的功效与可靠性。