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Reengineering Silicon Power Devices: How to improve both conduction and switching losses

This deep-dive explains how to reduce both conduction and switching losses without traditional tradeoffs. Learn key concepts like RDS(on), QSW, and EOSS, and see real boost converter test results demonstrating improved efficiency, performance, and reliability versus conventional silicon and GaN solutions.

4/23/2026 6:58:19 PM

Part List

图片制造商零件编号描述FET 类型技术漏源电压（Vdss）可供货数量价格查看详情
新产品
MOSFET N-CH 200V 151A TOLL		IS20M5R5S1TMOSFET N-CH 200V 151A TOLLN 通道MOSFET（金属氧化物）200 V100 - 立即发货$13.19查看详情
新产品
MOSFET N-CH 200V 172A TO-220		IS20M6R3S1PMOSFET N-CH 200V 172A TO-220N 通道MOSFET（金属氧化物）200 V977 - 立即发货$10.11查看详情
DigiKey 新品
MOSFET N-CH 200V 45A PDFN-8		IS20M028S1CMOSFET N-CH 200V 45A PDFN-8N 通道MOSFET（金属氧化物）200 V3106 - 立即发货$4.98查看详情
DigiKey 新品
MOSFET N-CH 200V 41A TO-220		IS20M028S1PMOSFET N-CH 200V 41A TO-220N 通道MOSFET（金属氧化物）200 V991 - 立即发货$5.71查看详情
DigiKey 新品
MOSFET N-CH 150V 133A PDFN-8		IS15M7R1S1CMOSFET N-CH 150V 133A PDFN-8N 通道MOSFET（金属氧化物）150 V0$7.98查看详情