eGaN Basics

eGaN® Basics

EPC

This tutorial covers the basics of EPC’s enhancement mode gallium nitride (eGaN®) transistors. EPC’s eGaN® transistors give the design engineer a whole new spectrum of performance compared with silicon power MOSFETs. These advantages can be applied to gain efficiency advantages, size advantages, or a combination of both.

Related Parts

图片制造商零件编号描述功能嵌入式使用的 IC/零件可供货数量价格查看详情
EVAL BOARD FOR EPC2015EPC9001EVAL BOARD FOR EPC2015半 H 桥驱动器（外部 FET）无EPC20150 - 立即发货$125.39查看详情
EVAL BOARD FOR EPC2001EPC9017EVAL BOARD FOR EPC2001半 H 桥驱动器（外部 FET）无EPC20010 - 立即发货$165.44查看详情
EVAL BOARD FOR EPC8007EPC9027EVAL BOARD FOR EPC8007半 H 桥驱动器（外部 FET）无EPC80070 - 立即发货$200.27查看详情
EVAL BOARD FOR EPC2001EPC9002EVAL BOARD FOR EPC2001半 H 桥驱动器（外部 FET）无EPC20010 - 立即发货$125.39查看详情
PTM Published on: 2010-09-27

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Related Product Training Modules

Driving eGaN FETs with the LM5113 The advantages of EPC’s enhancement mode gallium nitride transistors and the key design challenges of implementing the new device technology.
Driving eGaN® Power Transistors EPC brings enhancement mode to GaN giving the design engineer a whole new spectrum of performance compared with silicon power MOSFETs.
eGan® FET's Characteristics The operation of EPC’s enhancement mode gallium nitride transistors.