TP65B110HRU 650 V 110 mΩ High-Voltage GaN Bidirectional Switch

The TP65B110HRU is a 650 V 110 mΩ common-drain bidirectional switch (BDS) built on the Renesas SuperGaN® Gen I bidirectional platform. It conducts current and blocks voltage in both directions with the smallest footprint and an excellent switching figure of merit. The device combines a monolithic, bidirectional high-voltage, depletion-mode GaN with normally off, low-voltage silicon MOSFETs to provide superior performance, high threshold for standard gate-drive compatibility, easy integration, and robust reliability for advanced power applications.