CoolGaN™ BDS High-Efficiency 40 V GaN Power Solutions
Infineon Technologies CoolGaN BDS high-efficiency 40 V GaN power solutions are designed for the next-generation of low-voltage designs
The Infineon Technologies CoolGaN BDS 40 V G3 family brings the benefits of gallium nitride (GaN) technology to low-voltage power applications, offering significantly reduced switching losses, ultra-fast switching speeds, and improved overall efficiency compared to traditional silicon MOSFETs. These devices are optimized for high-frequency operation, enabling designers to reduce system size while maintaining excellent performance.
The CoolGaN BDS 40 V G3 portfolio is designed to support a wide range of power conversion topologies, providing low RDS(on), low gate charge, and superior figure of merit (FOM). This combination allows for higher power density and improved thermal efficiency, making these devices ideal for compact, high-performance designs.
To accelerate development, Infineon offers evaluation boards and reference designs that help engineers quickly implement and validate CoolGaN-based solutions, reducing time-to-market and design complexity.
- Low RDS(on) for reduced conduction losses
- Ultra-low gate charge (Qg)
- High-speed switching capability
- Low switching losses compared to silicon MOSFETs
- Excellent FOM (RDS(on) x Qg)
- Optimized for high-frequency operation
- Compact package options for space-constrained designs
- Robust and reliable performance
- Higher system efficiency and reduced energy consumption
- Smaller system size through higher switching frequency
- Lower heat generation and improved thermal management
- Increased power density
- Reduced passive component size and cost
- Improved overall system performance
- Point-of-load (POL) converters
- Synchronous buck converters
- Battery-powered systems
- Low-voltage motor drives (fans, pumps)
- Robotics and drones
- Server and telecom power delivery
- Consumer electronics
CoolGaN™ BDS High-Efficiency 40 V GaN Power Solutions
| 图片 | 制造商零件编号 | 描述 | 不同 Id、Vgs 时导通电阻(最大值) | 不同 Vgs 时栅极电荷 (Qg)(最大值) | 不同 Vds 时输入电容 (Ciss)(最大值) | 可供货数量 | 价格 | 查看详情 | |
|---|---|---|---|---|---|---|---|---|---|
![]() | ![]() | IGK048B041SXTSA1 | GANFET N-CH 40V 53A 16WLBGA | 4.8 毫欧 @ 5A,5V | 9.1 nC @ 5 V | 600 pF @ 20 V | 3964 - 立即发货 | $1.84 | 查看详情 |
![]() | ![]() | IGK120B041SXTSA1 | GANFET N-CH 40V 30A 16WLBGA | 12 毫欧 @ 5A,5V | 4.4 nC @ 5 V | 290 pF @ 20 V | 3975 - 立即发货 | $0.86 | 查看详情 |



