DMTHxxxxSPGWQ 100 V PowerDI 8080 Automotive MOSFET

Diodes expands its thermally efficient PowerDI8080-5-packaged MOSFET portfolio with the ultra-low R_DS(ON), automotive-compliant, 100 V MOSFET alongside 40 V to 80 V rated MOSFETs. The portfolio is targeted at high-power BLDC motors and DC/DC converters in ICE, electric, and hybrid vehicles.

Applications such as battery disconnect switches, onboard chargers, and 48 V high-power BLDC motor drive applications can reduce conduction losses and maximize efficiency by leveraging the 1.5 mΩ maximum drain-source on-resistance of the 100 V-rated DMTH10H1M7SPGWQ MOSFET.

The DMTH4M40SPGWQ 40 V-rated gullwing-packaged MOSFET features a 0.4 mΩ max. R_DS(ON), one of the lowest in the industry. This is ideal for 12 V BLDC motors and DC/DC applications. The 60 V-rated MTH6M70SPGWQ offers high performance for 24 V applications.

The PowerDI8080-5 package has a PCB footprint of 64 mm², which is 40% less than that occupied by the TO-263 package format. It also has an offboard profile of 1.7 mm, which is 63% lower than that of the TO-263 (D2PAK).

The copper clip bonding between the die and the terminals facilitates a low junction-to-case thermal resistance as low as 0.3°C/W, enabling the PowerDI8080-5 to handle currents as high as 847 A and deliver a power density eight times greater than the TO-263 package.

Standard-compliance versions are also available and are suitable for industrial and commercial applications.