GC125N65TF
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GC20N65T

DigiKey Part Number
3141-GC20N65T-ND
Manufacturer
Goford Semiconductor
Manufacturer Product Number
GC20N65T
Description
N650V,RD(MAX)<170M@10V,VTH2.5V~4
Manufacturer Standard Lead Time
8 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 20A (Tc) 151W (Tc) Through Hole TO-220
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Goford Semiconductor
Series
SuperJunction
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
170mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1724 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
151W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
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In-Stock: 22
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Quantity
All prices are in SGD
Tube
QuantityUnit PriceExt Price
1$5.34000$5.34
50$2.70340$135.17
100$2.44880$244.88
500$2.00290$1,001.45
1,000$1.85966$1,859.66
2,000$1.77633$3,552.66
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:$5.34000
Unit Price with VAT:$5.82060