Fifth-Generation Deep Trench Process Super Junction MOSFETs

Toshiba's 600 V and 650 V DTMOS V process delivers compact MOSFETs that enable simplified design-in and reduced EMI noise in power switching applications

Image of Toshiba's Fifth Generation Deep Trench Process Super Junction MOSFETsToshiba introduces the next generation of super junction (SJ) deep trench semiconductor technology for high-efficient power MOSFETs. Devices based on the new DTMOS V process operate with lower EMI noise and reduced on resistance (RDS(ON)) compared to previous DTMOS IV MOSFETs.

As with the previous DTMOS IV semiconductor technology, DTMOS V is based on a single epitaxial process involving ‘deep trench etching’ followed by P-type epitaxial growth. The deep trench filling process results in a narrowing of cell pitch and a lowering of RDS(ON) when compared with more conventional planar processes. Toshiba’s deep trench process allows an improved thermal coefficient of RDS(ON) compared to conventional super junction MOSFETs using multi-epitaxial growth process.

With DTMOS V, Toshiba has been able to reduce RDS(ON) of the DPAK TK290P60Y by up to 17% compared with the lowest RDS(ON) available from the TK12P60W DTMOS IV MOSFET. The company has also further optimized the trade-off between switching performance and EMI noise.

DTMOS V MOSFETs simplify the design and improve the performance of power conversion applications, including switching power supplies, power factor correction (PFC) designs, LED lighting, and other AC/DC applications. The first MOSFETs based on the fifth-generation process offer ratings of 600 V and 650 V and are supplied in DPAK (TO-252) and TO-220SIS (smart isolation) packaging. Maximum ON resistance ratings range from just 0.29 Ω to 0.56 Ω.

Features
  • Up to 17% reduction in RDS(ON) (drain-source on-resistance) compared with the previous DTMOS IV
  • ON resistance lineup 0.29 Ω to 0.56 Ω
  • Various package lineup: To be deployed in 2 packages (DPAK, TO-220SIS)
Applications    
  • Servers
  • Switching power supplies for base stations or others
 
  • Photovoltaic inverters

MOSFETs

ImageManufacturer Part NumberDescriptionAvailable QuantityView Details
TK560P60Y,RQ datasheet linkMOSFET N-CHANNEL 600V 7A DPAKTK560P60Y,RQMOSFET N-CHANNEL 600V 7A DPAK3880 - Immediate
TK560P60Y,RQ product page link
TK380P60Y,RQ datasheet linkMOSFET N-CHANNEL 600V 9.7A DPAKTK380P60Y,RQMOSFET N-CHANNEL 600V 9.7A DPAK3985 - Immediate
TK380P60Y,RQ product page link
TK560P65Y,RQ datasheet linkMOSFET N-CHANNEL 650V 7A DPAKTK560P65Y,RQMOSFET N-CHANNEL 650V 7A DPAK3979 - Immediate
TK560P65Y,RQ product page link
TK290P60Y,RQ datasheet linkMOSFET N-CH 600V 11.5A DPAKTK290P60Y,RQMOSFET N-CH 600V 11.5A DPAK3929 - Immediate
TK290P60Y,RQ product page link
TK380P65Y,RQ datasheet linkMOSFET N-CHANNEL 650V 9.7A DPAKTK380P65Y,RQMOSFET N-CHANNEL 650V 9.7A DPAK3879 - Immediate
TK380P65Y,RQ product page link
TK290P65Y,RQ datasheet linkMOSFET N-CH 650V 11.5A DPAKTK290P65Y,RQMOSFET N-CH 650V 11.5A DPAK1960 - Immediate
TK290P65Y,RQ product page link
TK560A60Y,S4X datasheet linkMOSFET N-CH 600V 7A TO220SISTK560A60Y,S4XMOSFET N-CH 600V 7A TO220SIS185 - Immediate
TK560A60Y,S4X product page link
TK560A65Y,S4X datasheet linkMOSFET N-CH 650V 7A TO220SISTK560A65Y,S4XMOSFET N-CH 650V 7A TO220SIS190 - Immediate
TK560A65Y,S4X product page link
TK380A60Y,S4X datasheet linkMOSFET N-CH 600V 9.7A TO220SISTK380A60Y,S4XMOSFET N-CH 600V 9.7A TO220SIS156 - Immediate
TK380A60Y,S4X product page link
TK290A65Y,S4X datasheet linkMOSFET N-CH 650V 11.5A TO220SISTK290A65Y,S4XMOSFET N-CH 650V 11.5A TO220SIS145 - Immediate
TK290A65Y,S4X product page link
TK290A60Y,S4X datasheet linkMOSFET N-CH 600V 11.5A TO220SISTK290A60Y,S4XMOSFET N-CH 600V 11.5A TO220SIS161 - Immediate
TK290A60Y,S4X product page link
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Published: 2017-07-19