MOSFET-based SLLIMM™-nano Modules

STMicroelectronics has extended its offering of intelligent power modules with the introduction of the MOSFET-based SLLIMM-nano devices (1 A and 2 A current rating at 25°C with 500 V breakdown voltage). The low MOSFET on-resistance (3.6 Ω and 1.7 Ω in 2 A and 1 A variants, respectively) combined with low switching losses ensure high overall energy efficiency and reduced cost.

They target applications up to 100 W such as compressors, pumps, fans, and other low-power motor drives working up to 20 kHz in hard-switching circuitries.

The devices are available in zig-zag lead and inline-lead package options, giving designers extra flexibility to simplify the board layout and minimize controller size in mechatronic assemblies and other space-constrained applications.

Features

• Integrate a three-phase MOSFET inverter bridge and gate driver HVICs
• 1 A – 2 A of current rating at 25°C
• Low MOSFET on-resistance (3.6 Ω and 1.7 Ω max. for 2 A and 1 A variants, respectively)
• 150°C of maximum operating junction temperature