M1F45M12W2-1LA Automotive-Grade ACEPACK DMT-32 Power Module
STMicroelectronics' power module achieves fourpack topology with an integrated NTC
STMicroelectronics' ACEPACK DMT-32 power module realizes a fourpack topology with integrated NTC tailored for the DC/DC converter stage of the OBC in hybrid and electric vehicles. The power module features four silicon carbide STMicroelectronics 2nd generation Power MOSFETs. The ACEPACK DMT-32 ensures the best compromise between energy losses and high switching frequency operation mode thanks to the well-recognized chip technology. This module allows users to create complex topologies with very high power densities and high efficiency requirements. The AIN-insulated substrate enables optimal thermal performance. Moreover, the specific design featuring grooves on the molding ensures a high creepage distance.
- AQG 324 qualified
- 1,200 V blocking voltage
- 47.5 mΩ of typical RDS(ON)
- Maximum operating junction temperature TJ = +175°C
- DBC Cu-AIN-Cu-based substrate to improve thermal performance
- Insulation voltage 3 kV
- Integrated NTC temperature sensor
M1F45M12W2-1LA Automotive-Grade ACEPACK DMT-32 Power Module
| Image | Manufacturer Part Number | Description | Technology | Configuration | FET Feature | Available Quantity | Price | View Details | |
|---|---|---|---|---|---|---|---|---|---|
![]() | ![]() | M1F45M12W2-1LA | MOSFET 4N-CH 1200V ACEPACK DMT | Silicon Carbide (SiC) | 4 N-Channel | - | 117 - Immediate | $68.62 | View Details |



