M-Series IGBTs

The M-series 1200 V IGBTs from STMicroelectronics feature advanced trench-gate field-stop technology to save more energy and increase reliability in applications such as solar inverters, welding equipment, uninterruptible power supplies, and industrial motor drives.

With highly optimized conduction and turn-off characteristics, as well as low turn-on losses, these new and improved IGBTs are ideal for use in hard-switching circuits operating up to 20 kHz. Increased maximum operating temperature of 175°C, a wide safe operating area (SOA) with latch-up free operation, and short-circuit withstand time of 10 µs at 150°C ensure rugged performance in harsh ambient and electrical environments.

The third generation of technology at the heart of these new devices includes a new advanced design for the trench gate structure and optimized high-voltage IGBT architecture. This minimizes voltage overshoot and eliminates oscillation during switch-off, thereby reducing energy losses and simplifying circuit design. At the same time, low saturation voltage (V_{CE (sat)}) ensures high conduction efficiency. The positive temperature coefficient and tight parameter distribution of VCE (sat) simplify paralleling of devices for increased power-handling capability.

The new devices also benefit from enhanced efficiency at turn-on. Moreover, the latest-generation diode technology co-packaged in anti-parallel with the IGBT provides fast recovery time and enhanced softness without significantly increasing turn-on losses, resulting in outstanding EMI performance.

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