MacomTechnology Solutions

MAGX-100027-300C0P GaN Amplifier

MACOM's GaN amplifier features more than 71% saturated drain efficiency (P2.5 dB)

Image of MACOM's MAGX-100027-300C0P GaN AmplifierMACOM's MAGX-100027-300C0P is a high-power GaN on Si HEMT device optimized for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with peak output power levels of 300 W (54.8 dBm) in a plastic package.

Features
  • GaN on Si HEMT depletion-mode amplifier
  • 300 W pulsed or CW operation
  • >71% saturated drain efficiency (P2.5 dB)
  • Specified from 10 MHz to 2700 MHz
  • Standard TO-272 plastic package
  • RoHS compliant and +260°C reflow compatible
Applications
  • Defense communications and RF jamming
  • VHF and UHF land mobile radio
  • L-band satellite communications
  • Wireless infrastructure and ISM applications

MAGX-100027-300C0P GaN Amplifier

ImageManufacturer Part NumberDescriptionAvailable QuantityPriceView Details
IC AMP CELL 0HZ-2.7GHZ TO272S-4IMAGX-100027-300C0PIC AMP CELL 0HZ-2.7GHZ TO272S-4I0 - Immediate
4060 - Factory Stock		$483.84View Details
Published: 2020-12-14