IXYS

600 V GenX3SC™ IGBTs

Digi-Key introduces 600 V GenX3SC™ IGBTs from IXYS/Littelfuse

Image of IXYS Corporation/Littelfuse's 600 V GenX3SC™ IGBTsThe recent emergence and commercialization of silicon carbide (SiC) technology in the power semiconductor industry has brought to light significant performance advances in the development of low loss, high temperature discrete power components. IXYS/Littelfuse has combined the latest silicon carbide diode technology with its advanced GenX3™ IGBT platform, enabling critical applications like switch mode power supplies, motor drives, power factor correction circuits, and wind and solar inverters to achieve new levels of performance and energy efficiency. This integration results in a significant reduction in dynamic losses in both the IGBT and diode, giving way to substantial system-level performance improvements.

Features Applications
  • Ultrafast Silicon Carbide Schottky CoPacked Diode
  • No reverse recovery
  • Square RBSOA
  • High power density
  • Optimized for low conduction and switching losses
  • Two speed classifications (B3 and C3 Class)
  • Avalanche rated
  • Proprietary ISOPLUS package options (2500 V electrical isolation)
  • Increased overall system level efficiency
  • Reduction in overall system cost
  • Ability to increase PWM frequencies to reduce magnetic and filtering component size and count
  • Enables use of reduced heat sinking and/or cooling
  • High frequency power inverters
  • UPS
  • Motor drives
  • SMPS
  • PFC circuits
  • Battery chargers
  • Welding machines
  • Lamp ballasts

600 V GenX3SC IGBTs

ImageManufacturer Part NumberDescriptionAvailable QuantityPrice
IGBT PT 600V 60A TO-263AAIXGA30N60C3C1IGBT PT 600V 60A TO-263AA0 - ImmediateSee Page for PricingView Details
IGBT PT 600V 75A TO-247ADIXGH36N60B3C1IGBT PT 600V 75A TO-247AD0 - Immediate$46.85View Details
IGBT PT 600V 75A TO-247ADIXGH48N60C3C1IGBT PT 600V 75A TO-247AD0 - Immediate$47.49View Details
Published: 2014-02-12