HyperRAM Memory

Infineon's 64 Mb HyperRAM™ devices are high-speed, self-refresh dynamic RAM (DRAM) with a HyperBus™ interface for systems requiring expanded scratchpad memory, making it ideal for SoCs with limited RAM by providing a scalable solution for extending fast read and write operations externally. HyperRAM provides read/write bandwidth of up to 333 MBps in DDR mode.

Infineon's HyperRAM memory family is initially offered in a 3 V power-supply option and in 64 Mb with other densities and voltages to follow. HyperRAM memories will be available in a space-saving 8 mm x 6 mm ball grid array (BGA) package. When paired with HyperFlash memory, both products reside on the same HyperBus interface resulting in a significant reduction in the number of signals that need to be routed on the printed circuit board (PCB) compared to generic DRAM. This leads to a simple, cost-effective solution for system-level designers.

The HyperRAM shares a common footprint with HyperFlash™ NOR Flash memory. The HyperRAM is available in an industrial-plus operating temperature range of -40°C to 105°C. Infineon applies stringent testing and qualification processes to ensure all parts meet their world-class quality requirements and offers AEC-Q100 qualification.