HMC717A Monolithic Microwave Integrated Circuit Amplifier

Analog Devices offers their HMC717A low noise, GaAs, pHEMT, 4.8 GHz to 6.0 GHz frequency, monolithic microwave integrated circuit amplifier

Image of Analog Devices HMC717A Monolithic Microwave Integrate Circuit AmplifierADI’s HMC717ALP3E is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC) amplifier. This amp is ideal for fixed wireless and LTE/WiMAX/4G base station front-end receivers operating between 4.8 GHz and 6.0 GHz. The HMC717ALPE was optimized to provide 1.1 dB noise figure, 14.5 dB gain, and +29.5 dBm output IP3 from a single supply of +3 V to +5 V. Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components. This amplifier can be biased with +3 V to +5 V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application.

Features
  • Frequency: 4.8 GHz to 6 GHz
  • P1dB: 18 dBm
  • Gain: 14.5 dB
  • Noise figure: 1.1 dB
  • RF type: LTE, WiMAX
  • Voltage supply: 3 V to +5 V
  • Current supply: 68 mA
  • Test frequency: 4.8 GHz to 6 GHz
  • Package / case: 16 VFQFN exposed pad (16 QFN 3 x 3)
Applications
  • FBTS and infrastructure
  • Repeaters and femtocells
  • Public safety
  • Fixed wireless
  • LTE/WiMAX/4G
  • Cellular
  • Public safety radio
  • Access points

HMC717A Monolithic Microwave Integrated Circuit Amplifier

ImageManufacturer Part NumberDescriptionGainNoise FigureRF TypeAvailable QuantityPriceView Details
IC RF AMP LTE 4.8GHZ-6GHZ 16QFNHMC717ALP3EIC RF AMP LTE 4.8GHZ-6GHZ 16QFN14.5dB1.1dBLTE, WiMax150 - Immediate$21.51View Details
Published: 2017-01-25