The HMC311 devices from Analog Devices are GaAs, InGaP, heterojunction bipolar transistors (HBT) gain block, monolithic microwave integrated circuit (MMIC), surface-mount technology (SMT), direct current to 6 GHz amplifiers. Packaged in industry standard SC70 or SOT-89 packages, or a 3 mm × 3 mm quad flat no-lead (QFN) package, these amplifiers can be used as either cascadable 50 Ω gain stages or to drive the low oscillator (LO) port of HMC mixers with up to 15 dBm, 16.5 dBm, or 17 dBm output power. The HMC311 devices offer gains of 14.5 dB, 15 dB, or 16 dB, and output IP3s of 31.5 dBm, 30 dBm, or 32 dBm while requiring only 56 mA or 54 mA from a 5 V supply. The Darlington feedback pair or topology used results in reduced sensitivity to normal process variations and yields excellent gain stability over temperature while requiring a minimal number of external bias components.
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Features
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- Gain: 14.5 dB, 15 dB, 16 dB
- P1dB output power: 15 dBm, 15.5 dB
- Output IP3: 30 dBm, 31.5 dBm, 32 dBm
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- Cascadable 50 Ω inputs/outputs
- 16-lead 3 mm × 3 mm surface-mount technology (SMT), SOT-89, SC70 packages
- Single supply: 5 V
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Applications
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- Cellular/PCS/3G
- Fixed wireless and WLAN
- Cable television (CATV), cable modem, and digital broadcast satellite (DBS)
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- Microwave radio and test equipment
- WiBro/WiMax/4G
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The HMC311 devices from Analog Devices are GaAs, InGaP, heterojunction bipolar transistors (HBT) gain block, monolithic microwave integrated circuit (MMIC), surface-mount technology (SMT), direct current to 6 GHz amplifiers. Packaged in industry standard SC70 or SOT-89 packages, or a 3 mm × 3 mm quad flat no-lead (QFN) package, these amplifiers can be used as either cascadable 50 Ω gain stages or to drive the low oscillator (LO) port of HMC mixers with up to 15 dBm, 16.5 dBm, or 17 dBm output power. The HMC311 devices offer gains of 14.5 dB, 15 dB, or 16 dB, and output IP3s of 31.5 dBm, 30 dBm, or 32 dBm while requiring only 56 mA or 54 mA from a 5 V supply. The Darlington feedback pair or topology used results in reduced sensitivity to normal process variations and yields excellent gain stability over temperature while requiring a minimal number of external bias components.
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