IRF7606PbF Datasheet by Infineon Technologies

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HEXFET® Power MOSFET
5/13/04
IRF7606PbF
Absolute Maximum Ratings
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Thermal Resistance
Parameter Max. Units
RθJA Maximum Junction-to-Ambient 70 °C/W
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The new Micro8 package, with half the footprint area
of the standard SO-8, provides the smallest footprint
available in an SOIC outline. This makes the Micro8
an ideal device for applications where printed circuit
board space is at a premium. The low profile (<1.1mm)
of the Micro8 will allow it to fit easily into extremely thin
application environments such as portable electronics
and PCMCIA cards.
Micro8
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
lGeneration V Technology
lUltra Low On-Resistance
lP-Channel MOSFET
lVery Small SOIC Package
lLow Profile (<1.1mm)
lAvailable in Tape & Reel
lFast Switching
lLead-Free
VDSS = -30V
RDS(on) = 0.09Ω
Description
Top View
8
1
2
3
45
6
7
D
D
DG
S
A
D
S
S
Parameter Max. Units
VDS Drain-Source Voltage -30 V
ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -3.6
ID @ TA = 70°C Continuous Drain Current, VGS @ -10V -2.9 A
IDM Pulsed Drain Current-29
PD @TA = 25°C Maximum Power Dissipation1.8 W
PD @TA = 70°C Maximum Power Dissipation 1.1 W
Linear Derating Factor 14 mW/°C
VGS Gate-to-Source Voltage ± 20 V
VGSM Gate-to-Source Voltage Single Pulse tp<10µS 30 V
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
TJ , TSTG Junction and Storage Temperature Range -55 to + 150 °C
Soldering Temperature, for 10 seconds 240 (1.6mm from case)
PD - 95245
International IiiR Rectifier Gatermrsource Charge Gatertororam ("Mule-r") Charge used were rrem
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Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.4A, VGS = 0V
trr Reverse Recovery Time ––– 43 64 ns TJ = 25°C, IF = -2.4A
Qrr Reverse Recovery Charge ––– 50 76 nC di/dt = -100A/µs
Source-Drain Ratings and Characteristics
 
  -29
-1.8
A
S
D
G
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -30 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– -0.024 ––– V/°C Reference to 25°C, ID = -1mA
––– 0.075 0.09 VGS = - 10V, ID = -2.4A
0.130 0.15 VGS = -4.5V, ID = -1.2A
VGS(th) Gate Threshold Voltage -1.0 ––– ––– V VDS = VGS, ID = -250µA
gfs Forward Transconductance 2.3 ––– ––– S VDS = -10V, ID = -1.2A
––– ––– -1.0 VDS = -24V, VGS = 0V
––– ––– -25 VDS = -24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V
QgTotal Gate Charge ––– 20 30 ID = -2.4A
Qgs Gate-to-Source Charge ––– 2.1 3.1 nC VDS = -24V
Qgd Gate-to-Drain ("Miller") Charge ––– 7.6 11 VGS = -10V, See Fig. 9
td(on) Turn-On Delay Time ––– 13 ––– VDD = -10V
trRise Time ––– 20 ––– ID = -2.4A
td(off) Turn-Off Delay Time ––– 43 ––– RG = 6.0Ω
tfFall Time ––– 39 ––– RD = 4.0Ω
Ciss Input Capacitance ––– 520 ––– VGS = 0V
Coss Output Capacitance ––– 300 ––– pF VDS = -25V
Crss Reverse Transfer Capacitance ––– 140 ––– ƒ = 1.0MHz, See Fig. 8
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
Ω
RDS(on) Static Drain-to-Source On-Resistance
IDSS Drain-to-Source Leakage Current
nA
ns
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 10 )
ISD ≤ -2.4A, di/dt ≤ -130A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤
10sec.
Mom-10nd IEER Recnfler
IRF7606PbF
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Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Typical Source-Drain Diode
Forward Voltage
1
10
100
0.1 1 10
D
DS
20µs PULSE WIDTH
T = 25°C
A
-I , Drain-to-Source Current (A)
-V , Drain-to-Source Voltage (V)
J
-3.0V
VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
1
10
100
0.1 1 10
D
DS
A
-I , Drain-to-Source Current (A)
-V , Drain-to-Source Voltage (V)
-3.0V
VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
20µs PULSE WIDTH
T = 150°C
J
1
10
100
3.0 3.5 4.0 4.5 5.0 5.5 6.0
T = 25°C
T = 150°C
J
J
GS
D
A
-I , Drain-to-Source Current (A)
-V , Gate-to-Source Voltage (V)
V = -10V
20µs PULSE WIDTH
DS
0.1
1
10
100
0.4 0.6 0.8 1.0 1.2 1.4 1.6
T = 25°C
T = 150°C
J
J
V = 0V
GS
SD
SD
A
-I , Reverse Drain Current (A)
-V , Source-to-Drain Voltage (V)
mormmm‘ RRer'flor 03 / VGs =-45V ,/ a2 , / /// ’/ m was =-1ov m \ \ \ | an a 2 4 a a m 12 45‘ Brain Currem (A) 014 012 am one 006 am 2 a m 14 VVGS ‘ GaterwrSource Vokage (V)
IRF7606PbF
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Fig 6. Typical On-Resistance Vs. Drain
Current
Fig 7. Typical On-Resistance Vs. Gate
Voltage
R
DS(on)
, Drain-to-Source On Resistance ( Ω )
Fig 5. Normalized On-Resistance
Vs. Temperature
R
DS(on)
, Drain-to-Source On Resistance ( Ω )
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
A
V = -10V
GS
I = -2.7A
D
Mom-10nd IEER Recnfler SINGLE PULSE
IRF7606PbF
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Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 8. Typical Capacitance Vs.
Drain-to-Source Voltage
0
200
400
600
800
1000
1 10 100
C, Capacitance (pF)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
4
8
12
16
20
0 5 10 15 20 25 30
G
GS
-V , Gate-to-Source Voltage (V)
Q , Total Gate Charge (nC)
V = -24V
V = -15V
DS
DS
FOR TEST CIRCUIT
SEE FIGURE 9
I = -2.7A
D
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
—-I LOI (133E (xx) \. PART NUMBER XXYWP‘ (7501 O W K i International IiiR Rectifier
IRF7606PbF
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Micro8 Part Marking Information
Micro8 Package Outline
Dimensions are shown in milimeters (inches)
INCHES MILLIMETERS
MIN MAX MIN MAX
A
0.10 (.004)
0.25 (.010) M A M
H
1 2 3 4
8 7 6 5
D
- B - 3
3
E
- A -
e
6X
e 1
- C -
B 8X
0.08 (.003) M C A S B S
A 1 L
8X
C
8X
θ
NOTES:
1 DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2 CONTROLLING DIMENSION : INCH.
3 DIMENSIONS DO NOT INCLUDE MOLD FLASH.
A .036 .044 0.91 1.11
A1 .004 .008 0.10 0.20
B .010 .014 0.25 0.36
C .005 .007 0.13 0.18
D .116 .120 2.95 3.05
e .0256 BASIC 0.65 BASIC
e1 .0128 BASIC 0.33 BASIC
E .116 .120 2.95 3.05
H .188 .198 4.78 5.03
L .016 .026 0.41 0.66
θ
0° 6° 0° 6°
DIM
LEAD ASSIGNMENTS
SINGLE DUAL
D D D D D1 D1 D2 D2
S S S G S1 G1 S2 G2
1 2 3 4 1 2 3 4
8 7 6 5 8 7 6 5
RECOMMENDED FOOTPRINT
1.04
( .041 )
8X
0.38
( .015 ) 8X
3.20
( .126 )
4.24
( .167 )
5.28
( .208 )
0.65
( .0256 )6X
LOT CODE (XX)
EXAMPLE : T HIS IS AN IRF 7501
PART NUMBER
P = DE S IGNAT E S L E AD - F R E E
PRODUCT (OPTIONAL)
W = WE E K
Y = YEAR
DAT E CODE (YW) - S ee tabl e bel ow
WW = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
YE AR Y
WOR K
WE E K W
92009
52005
2003
2002
2001
2004
3
2
1
4
2007
2006
2008
7
6
8
2010 0
03
02
01
04
C
B
A
D
26
24
25
Z
X
Y
B2002 B28
WW = (27-52) IF PRECEDED BY A LETTER
YE AR
2001
Y
A
WEEK
WOR K
27
W
A
K2010
F2006
2004
2003
2005
D
C
E
2008
2007
2009
H
G
J
X50
30
29
D
C
51
52
Y
Z
International Ian Rectifier mm H 44%» International IEER Rectifier
IRF7606PbF
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IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.05/04
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
Micro8 Tape & Reel Information
Dimensions are shown in millimeters (inches)
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. OUTLINE CONFORMS TO EIA-481 & EIA-541.
2. CONTROLLING DIMENSION : MILLIMETER.