XTHI30BF850 Datasheet by SunLED

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Part Number: XTHI30BF850
T-1 (3mm) INFRARED EMITTING DIODE
Oct 11,2016 XDSA2679 V8-Z Layout: Maggie L.
P. 1/3
Features
● Radial / Through hole package
● Reliable & robust
● Low power consumption
● Available on tape and reel
● RoHS Compliant
Absolute Maximum Ratings
(TA=25°C)
THI/850
(GaAlAs) Unit
Reverse Voltage VR 5 V
Forward Current IF 50 mA
Forward Current (Peak)
1/10 Duty Cycle
0.1ms Pulse Width
iFS 1000 mA
Power Dissipation PD 80 mW
Operating Temperature TA -40 ~ +85
°C
Storage Temperature Tstg -40 ~ +85
Lead Solder Temperature
[2mm Below Package Base] 260°C For 3 Seconds
Lead Solder Temperature
[5mm Below Package Base] 260°C For 5 Seconds
Package Schematics
Notes:
1. All dimensions are in millimeters (inches).
2. Tolerance is ±0.25(0.01") unless otherwise noted.
3. Specifications are subject to change without notice.
THI/850
(GaAlAs) Unit
Forward Voltage (Typ.)
(IF=20mA) VF 1.4 V
Forward Voltage (Max.)
(IF=20mA) VF 1.6 V
Reverse Current (Max.)
(VR=5V) IR 10 uA
Wavelength of Peak
Emission CIE127-2007* (Typ.)
(IF=20mA)
λP 850* nm
Spectral Line Full Width
At Half-Maximum (Typ.)
(IF=20mA)
△λ 50 nm
Capacitance (Typ.)
(VF=0V, f=1MHz) C 30 pF
Operating Characteristics
(TA=25°C)
Part
Number
Emitting
Material Lens-color
Radiant Intensity
CIE127-2007*
(Po=mW/sr)
@20mA
Radiant Intensity
CIE127-2007*
(Po=mW/sr)
@50mA
Wavelength
CIE127-2007*
nm
λP
Viewing
Angle
2θ 1/2
min. typ. min. typ.
XTHI30BF850 GaAlAs Blue Transparent 850* 50° 8* 15* 15* 49*
*Radiant intensity value and wavelength are in accordance with CIE127-2007 standards.
A Relative Humidity between 40% and 60% is recommended in
ESD-protected work areas to reduce static build up during assembly
process (Reference JEDEC/JESD625-A and JEDEC/J-STD-033)
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Part Number: XTHI30BF850
T-1 (3mm) INFRARED EMITTING DIODE
Oct 11,2016 XDSA2679 V8-Z Layout: Maggie L.
P. 2/3
THI/850
Remarks:
If special sorting is required (e.g. binning based on forward voltage,
luminous intensity / luminous flux),
the typical accuracy of the sorting process is as follows:
1. Radiant Intensity / Luminous Flux: +/-15%
2. Forward Voltage: +/-0.1V
Note: Accuracy may depend on the sorting parameters.
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Part Number: XTHI30BF850
T-1 (3mm) INFRARED EMITTING DIODE
Oct 11,2016 XDSA2679 V8-Z Layout: Maggie L.
P. 3/3
PACKING & LABEL SPECIFICATIONS
TERMS OF USE
1. Data presented in this document reflect statistical figures and should be treated as technical reference only.
2. Contents within this document are subject to improvement and enhancement changes without notice.
3. The product(s) in this document are designed to be operated within the electrical and environmental specifications indicated on the datasheet.
User accepts full risk and responsibility when operating the product(s) beyond their intended specifications.
4. The product(s) described in this document are intended for electronic applications in which a person’s life is not reliant upon the LED. Please
consult with a SunLED representative for special applications where the LED may have a direct impact on a person’s life.
5. The contents within this document may not be altered without prior consent by SunLED.
6. Additional technical notes are available at http://www.SunLEDusa.com/TechnicalNotes.asp