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STP13NM60N N-Channel 600V 11A (Tc) 90W (Tc) Through Hole TO-220-3
Price & Procurement
 

Quantity
All prices are in SGD.
Price Break Unit Price Extended Price
1 6.39000 $6.39
50 5.13180 $256.59
100 4.67560 $467.56
500 3.78614 $1,893.07
1,000 3.19312 $3,193.12
2,500 3.03347 $7,583.67
5,000 2.91943 $14,597.13

Submit a request for quotation on quantities greater than those displayed.

Product Overview
Digi-Key Part Number 497-8787-5-ND
Copy   497-8787-5-ND
Quantity Available 2,984
Can ship immediately
Manufacturer

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Manufacturer Part Number

STP13NM60N

Copy   STP13NM60N
Description MOSFET N-CH 600V 11A TO-220
Copy   MOSFET N-CH 600V 11A TO-220
Manufacturer Standard Lead Time 30 Weeks
Detailed Description

N-Channel 600V 11A (Tc) 90W (Tc) Through Hole TO-220-3

Copy   N-Channel 600V 11A (Tc) 90W (Tc) Through Hole TO-220-3
Documents & Media
Datasheets STF,I,P,U,W13NM60N
Other Related Documents STP13NM60N View All Specifications
Product Training Modules STMicroelectronics ST MOSFETs
Simulation Models STP13NM60N Spice Model
Catalog Page 1279 (SG2011-EN PDF)
Product Attributes Select All
Categories
Manufacturer STMicroelectronics
Series MDmesh™ II
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 360mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 790pF @ 50V
FET Feature -
Power Dissipation (Max) 90W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Frequently Bought Together
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Additional Resources
Standard Package ? 50
Other Names 497-8787-5

19:01:50 5/26/2019