ST(B,P)80NF10 Datasheet by STMicroelectronics

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April 2009 Doc ID 6958 Rev 18 1/14
14
STB80NF10
STP80NF10
N-channel 100 V, 0.012 , 80 A, TO-220, D2PA K
low gate charge STripFET™ II Power MOSFET
Features
Exceptional dv/dt capability
100% Avalanche tested
Application oriented characterization
Applications
Switching applications
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency isolated DC-DC converters for telecom
and computer application. It is also intended for
any application with low gate charge drive
requirements.
Figure 1. Internal schematic diagram
Type VDSS
RDS(on)
max ID
STP80NF10 100 V < 0.015 80 A
STB80NF10 100 V < 0.015 80 A
123
1
3
TO-220 D²PAK
Table 1. Device summary
Order codes Marking Package Packaging
STP80NF10 P80NF10@ TO-220 Tube
STB80NF10T4 B80NF10@ D²PAK Tape and reel
www.st.com
Contents STB80NF10, STP80NF10
2/14 Doc ID 6958 Rev 18
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
STB80NF10, STP80NF10 Electrical ratings
Doc ID 6958 Rev 18 3/14
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 100 V
VGS Gate- source voltage ±20 V
ID(1)
1. Limited by package
Drain current (continuous) at TC = 25 °C 80 A
ID (1) Drain current (continuous) at TC = 100 °C 80 A
IDM(2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 320 A
PTOT Total dissipation at TC = 25 °C 300 W
Derating factor 2 W/°C
dv/dt (3)
3. ISD < 80 A, di/dt < 300 A/µs, VDD= 80% V(BR)DSS
Peak diode recovery voltage slope 7 V/ns
EAS(4)
4. Starting Tj = 25 °C, ID = 40 A, VDD = 50 V
Single pulse avalanche energy 350 mJ
Tstg
Tj
Storage temperature
Operating junction temperature -55 to 175 °C
Table 3. Thermal resistance
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case max 0.5 °C/W
Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W
TlMaximum lead temperature for soldering purpose 300 °C
Electrical characteristics STB80NF10, STP80NF10
4/14 Doc ID 6958 Rev 18
2 Electrical characteristics
(TCASE=25 °C unless otherwise specified)
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS
Drain-source
breakdown voltage ID = 250 µA, VGS = 0 100 V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = Max rating
VDS = Max rating @125°C
500
10
nA
µA
IGSS
Gate-body leakage
current (VDS = 0) VGS = ±20 V ±100 nA
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V
RDS(on)
Static drain-source on
resistance VGS = 10 V, ID = 40 A 0.012 0.015
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
gfs (1)
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward transconductance VDS = 25 V , ID=40 A - 50 S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0 -
5500
700
175
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 50 V, ID = 80 A,
VGS = 10 V -
135
23
51.3
182 nC
nC
nC
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
VDD = 50 V, ID= 40 A,
RG=4.7 Ω, VGS=10 V
(see Figure 15)
-
26
80
116
60
-
ns
ns
ns
ns
STB80NF10, STP80NF10 Electrical characteristics
Doc ID 6958 Rev 18 5/14
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max Unit
ISD Source-drain current - 80 A
ISDM(1)
1. Pulse width limited by safe operating area
Source-drain current (pulsed) - 320 A
VSD (2)
2. Pulse duration=300µs, duty cycle 1.5%
Forward on voltage ISD = 80 A, VGS = 0 - 1.3 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=80 A, VDD = 50 V
di/dt = 100 A/µs,
Tj=150 °C
-
106
450
8.5
ns
nC
A
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Electrical characteristics STB80NF10, STP80NF10
6/14 Doc ID 6958 Rev 18
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Transconductance Figure 7. Static drain-source on resistance
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STB80NF10, STP80NF10 Electrical characteristics
Doc ID 6958 Rev 18 7/14
Figure 8. Gate charge vs. gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage
vs. temperature
Figure 11. Normalized on resistance vs.
temperature
Figure 12. Source-drain diode forward
characteristics
£41: 1 AMumssw Figure 15. Test circuit for inductive load switching and diode recovery times Figure 16. Unclamped inductive load test circuit J__ 43; {5: Figure 17. Unclamped inductive wavelorm Figure 18. Switching time waveform Doc ID 6958 Flev 18
Test circuits STB80NF10, STP80NF10
8/14 Doc ID 6958 Rev 18
3 Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
Figure 15. Test circuit for inductive load
switching and diode recovery times
Figure 16. Unclamped inductive load test
circuit
Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
µF
3.3
µFVDD
AM01469v1
VDD
47k1k
47k
2.7k
1k
12V
Vi=20V=VGMAX
2200
µF
PW
IG=CONST
100
100nF
D.U.T.
VG
AM01470v1
A
D
D.U.T.
S
B
G
25
AA
BB
RG
G
FAST
DIODE
D
S
L=100µH
µF
3.31000
µFVDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200
µF
3.3
µFVDD
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
AM01473v1
VDS
ton
tdon tdoff
toff
tf
tr
90%
10%
10%
0
0
90%
90%
10%
VGS
STB80NF10, STP80NF10 Package mechanical data
Doc ID 6958 Rev 18 9/14
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
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Package mechanical data STB80NF10, STP80NF10
10/14 Doc ID 6958 Rev 18
TO-220 mechanical data
Dim mm inch
Min Typ Max Min Typ Max
A 4.40 4.60 0.1730.181
b0.61 0.88 0.024 0.034
b1 1.14 1.70 0.044 0.066
c0.480.70 0.0190.027
D 15.25 15.75 0.6 0.62
D1 1.27 0.050
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F1.231.32 0.0480.051
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L1314 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L3028.90 1.137
P3.75 3.85 0.147 0.151
Q2.65 2.95 0.104 0.116
STB80NF10, STP80NF10 Package mechanical data
Doc ID 6958 Rev 18 11/14
D²PAK (TO-263) mechanical data
Dim mm inch
Min Typ Max Min Typ Max
A 4.40 4.60 0.1730.181
A1 0.030.230.001 0.009
b0.70 0.93 0.027 0.037
b2 1.14 1.70 0.045 0.067
c 0.45 0.60 0.017 0.024
c2 1.231.360.0480.053
D8.959.350.352 0.368
D1 7.50 0.295
E 10 10.40 0.3940.409
E1 8.50 0.334
e 2.54 0.1
e1 4.88 5.280.1920.208
H15 15.850.5900.624
J1 2.492.690.099 0.106
L2.292.790.090 0.110
L1 1.27 1.40 0.05 0.055
L2 1.30 1.75 0.051 0.069
R 0.4 0.016
V2 0° 8°0° 8°
0079457_M
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Packaging mechanical data STB80NF10, STP80NF10
12/14 Doc ID 6958 Rev 18
5 Packaging mechanical data
TAPE AND REEL SHIPMENT
D
2
PAK FOOTPRINT
* on sales type
DIM. mm inch
MIN. MAX. MIN. MAX.
A 330 12.992
B1.5 0.059
C 12.8 13.2 0.504 0.520
D20.2 0795
G 24.4 26.4 0.960 1.039
N100 3.937
T 30.4 1.197
BASE QTY BULK QTY
1000 1000
REEL MECHANICAL DATA
DIM. mm inch
MIN. MAX. MIN. MAX.
A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626
D 1.5 1.6 0.059 0.063
D1 1.59 1.61 0.062 0.063
E 1.65 1.85 0.065 0.073
F11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0.075 0.082
R 50 1.574
T 0.25 0.35 0.0098 0.0137
W23.7 24.3 0.933 0.956
TAPE MECHANICAL DATA
STB80NF10, STP80NF10 Revision history
Doc ID 6958 Rev 18 13/14
6 Revision history
Table 8. Document revision history
Date Revision Changes
04-Nov-2003 8 New datasheet according to PCN DSG-TRA/03/382
13-Dec-2004 9 D²PAK inserted
16-Dec-2004 10 @ inserted in table 2 for TO-220 marking
27-Jan-2005 11 New value in table 3
22-Feb-2005 12 Id value changed
28-Feb-2005 13 New value in table 3
01-Mar-2005 14 Vgs value changed
06-Apr-2006 15 The document has been reformatted
25-Jan-2007 16 Typo mistake on page 1 (order codes)
17-Nov-2008 17 EAS value has been updated
15-Apr-2009 18 IDSS value changed in Table 4: On/off states
STB80NF10, STP80NF10
14/14 Doc ID 6958 Rev 18
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