TLP176A Datasheet by Toshiba Semiconductor and Storage

TOSHIBA TLP176A TENTATIVE MEASUREMENT INSTRUMENT DATA ACQUISITION TELECOMMUNICATIDN PROGRAMMABLE CONTROL TLP176A The TOSHIBA TLP176A consists of gallium arsenide infrared emitting diode optically coupled In a photo-MOS FET in a SOP, which is suitable for surface mount assembly The TLP176A is suitable for replacement of mechanical relays in many applications which require space savings. 0 SOP 4pm (2.54801’4) 0 Peak Off-State Voltage: 0 Trigger LED Current I Ont-State Current 0 Oantate Resistance 0 Isnlatinn Voltage I UL Recognized : l-Form—A 60 V (MIN) : 3 mA (MAx.) : 400 mA (MAX.) : 2 0 (MAX) : 150(1va (MIN) : UL1577, File No‘ E67349 PIN CONFIGURATION (TOP VIEW) 1 E J4 2 E J3 1 2 ANODE 2 : CATHODE 3 : DRAIN 4 : DRAIN 1»Form-A 4 3 L43 m I z SCHEMATIC 1 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTOrMOS FET Unit in mm uzazs Izmw I mm J mm is 1r"— 7.u:u J'EDEC J'EITA TOSHIBA Weight ; 01 g 2003-03-12

TOSHIBA TLP176A MAXIMUM RATINGS (Ta = 25°C) CHARAC’I'ERJS'HC SYMBOL RATING UNIT Forward Current IF 50 mA I: Forward Current Derating (Ta 2 25°C) Alp/“C —0r5 mA/°C a Pulse Forward Current (100 as pulse, 100 pps) In: 1 A Reverse Voltage VR 5 V Junction Temperature Tj 125 “C 9; Off-State Output Terminal Voltage VOFF 60 V S Oantate Current . ION 400 mA E (91:28:;ng Current Derating AION /°C _4‘0 mA /°C 9 Junction Temperature Tj 125 °C Storage Temperature Range Tstg —55~ 125 °C Operating Temperature Range To” —40~85 “C Lead Soldering Temperature (10 s) T301 260 °C Isolation Voltage (AC, 1 min, R.H. E 60%) (Note 1) BVs 1500 Vrms (Note 1) Device considered a two-terminal device : pinsl and 2 shorted together and pins3 and 4 shorted together. RECOMMENDED OPERATING CONDITIONS CHARACTERISTIC SYMBOL MIN. TYP‘ MAX‘ UNIT Supply Voltage VDD — — 48 V Forward Current IF 5 7.5 25 mA OurState Current ION — — 400 mA Operating Temperature Top, —20 — 65 “C 2 2003-03-12

TOSHIBA TLP176A INDIVIDUAL ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT 12 Forward Voltage VF IF = 10 mA 10 1.15 13 V a Reverse Current IR VR = 5 V — — 10 ,uA Capacitance CT V : 0, f: 1 MHz — 30 — 17F a: E Off-State Current IOFF VOFF = 60V — — 1 /1A [14 E Capacitance COFF V : 0, f: 1 MHz — 140 — 17F Q COUPLED ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP, MAX. UNIT Trigger LED Current IF’I‘ ION = 400mA — 1 3 mA On-State Resistance RON ION = 400 mA, IF = 5 mA — 1 2 Q ISOLATION CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Capacitance Input to Output CS Vs = 0, f = 1 MHz — 0.8 — pF Isolation Resistance Rs Vs = 500 V, EH. 3 60% 5X1010 10“ — 0 AC, 1 minute 1500 — — V Isolation Voltage BVS AC, 1 second (in oil) — 3000 — rms DC, 1 minute (in oil) — 3000 — Vdc SWITCHING CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP, MAX. UNIT Turn-0n Time ION RL : 200 0. (Note 2) — 0.9 2.0 ms Tum-off Time tOFF VDD = 20 V. IF = 5 mA _ 0.1 1.0 (Note 2) Switching Time Test Circuit 1_F, 1 4 RE VDD 1F o—o— ro— —°VOUT 2 3 90% VOUT 10% t0N I tOFF 3 2003-03-12

TOSHIBA TLP176A 1F _ Ta ION (EMS) — Ta mo 2 E g :4 :2 E so 0 z a: D p - o <>< 3="" 33="" e="" (n="" so="" 2="" ‘="" 3%="" o="" g="" g;="" s="" g="" n.__="" a.="" .="" 51="" ‘0="" 8="" .3="" m="" 2="" s="" a="" o="" 10="" e="" a="" a="" 3="" 0="" i="" n="" 720="" o="" 20="" ‘0="" so="" an="" we="" 120="" 720="" u="" 20="" «i="" so="" an="" we="" ambient="" temperature="" ta="" (‘6)="" ambient="" temperature="" ta="" m="" ifp="" -="" dr="" if="" -="" vf="" 2="" sons="" 100="" e="" 3000="" pulse="" wm-rh="" s="" 100115="" 5"="" 5="" ta="5-0" e="" an="" mm)="" h="" a="" 5‘="" 10="" e?="" 500="" e="" gs="" sun="" e="" a:="" l="" 5="" be="" 8="" e="" mo="" e="" i="" m="">< 5'="" 5°="" 5="" as="" 3="" 30="" a="" 0,3="" §="" 4="" w="" 01="" :i="" 10’5="" 3="" 10’="" 3="" in”="" 3="" 10'="" 06="" as="" i="" n="" i="" 9="" u="" is="" 13="" duty="" cycle="" ratio="" de="" forward="" voltage="" v}:="" (v)="" ave/ata="" —="" if="" ifp="" —="" vfp="" a="" woo="" «a="" :5="" e="" suo="" \="" aoo=""> E :g 2 mo [“3“ g a} g 50 g: D an a; 5 >E E 10 as a «E E 5 a u m 3 PULSE WIDTH s w III 58 'ﬂ REPETITIVE FREQUENCY = Ion Hz a. E 1 Ta = 15°C 'a.1 0.3 0.5 l 3 5 In an 50 0.6 1.0 1.4 1.3 22 2.6 30 FORWARD CURRENT [1: (my PULSE FORWARD VOLTAGE v“: (V) 4 2003-03-12

TOSHIBA TLP176A IFT—Ta 5 E 5 A a” oE 31 a El: 9: E5: 2 m: 2H k S l a I: o 740 72a 0 2o 40 60 an 100 AMBIENT TEMPERATURE Ta (‘07 A RON — Ta G MOSFZT ONASTATE RESISTANCE RON o ,20 a 20 40 so so ma AMBIENT TEMPERATURE Ta (C) Mosnz'r ON-STATE CURRENT [0" (mm MOSI'ET Orr-ESTATE CURRENT lo" (mA) ICIN - VON 7 20a —wn 705 Au 70.2 a 02 0.4 06 MOSFET ON-STATE VOLTAGE VON (V) [OFF — Ta none 500 300 um 50 30 ID I ,20 o 20 4|) so so 100 AMBIENT TEMPERATURE Ta (‘0) 2003-03-12

TOSHIBA TLP176A RESTRICTIONS ON PRODUCT USE ozomacac .TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the ”Handling Guide for Semiconductor Devices," or “TOSHIBA Semiconductor Reliability Handbook” etc.. .The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (”Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. 0 GaAs (Gallium Arsenide) is a substance used in the productsdescribed in thisdocument. GaAs dust or vapor is harmful to the human body. Do not break, cut, crushu ordissolve chemically. O The products described in this document are subject to the foreign exchange and foreign trade laws. .The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. 0 The information contained herein is subject to change without notice. 6 2003-03-12

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