STP200NF04, STB200NF04(-1) Datasheet by STMicroelectronics
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1/13
PRELIMINARY DATA
December 2003
STP200NF04
STB200NF04 - STB200NF04-1
N-CHANNEL 40V - 120A TO-220/D2PAK/I2PAK
STripFET™ II POWER MOSFET
■STANDARD THRESHOLD DRIVE
■100% AVALANCHE TESTED
DESCRIPTION
This MOSFET is the latest development of STMicro-
electronics unique “Single Feature Size™” strip-
based process. The resulting transistor shows ex-
tremely high packing density for low on-resistance,
rugged avalanche characteristics and less critical
alignment steps therefore a remarkable manufactur-
ing reproducibility.
APPLICATIONS
■HIGH CURRENT, HIGH SWITCHING SPEED
■AUTOMOTIVE
ORDERING INFORMATION
TYPE VDSS RDS(on) IDPw
STP200NF04
STB200NF04
STB200NF04-1
40 V
40 V
40 V
< 0.0037 Ω
< 0.0037 Ω
< 0.0037 Ω
120 A
120 A
120 A
310 W
310 W
310 W
SALES TYPE MARKING PACKAGE PACKAGING
STP200NF04 P200NF04 TO-220 TUBE
STB200NF04T4 B200NF04 D2PAK TAPE & REEL
STB200NF04-1 B200NF04 I2PAK TUBE
TO-220
123
I2PAK
13
D2PAK
INTERNAL SCHEMATIC DIAGRAM
STP200NF04 - STB200NF04 - STB200NF04-1
2/13
ABSOLUTE MAXIMUM RATINGS
() Pulse width limited by safe operating area
(1) ISD ≤120A, di/dt ≤500A/µs, VDD ≤V(BR)DSS,T
j≤T
JMAX.
(2) Starting Tj= 25°C, Id= 60A, VDD=30 V
(#) Current Limited by Package
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS =0) 40 V
VDGR Drain-gate Voltage (RGS =20kΩ)40 V
VGS Gate- source Voltage ± 20 V
ID(#) Drain Current (continuos) at TC= 25°C 120 A
ID(#) Drain Current (continuos) at TC= 100°C 120 A
IDM ( ) Drain Current (pulsed) 480 A
PTOT Total Dissipation at TC= 25°C 310 W
Derating Factor 2.07 W/°C
dv/dt (1) Peak Diode Recovery voltage slope 1.5 V/ns
EAS (2) Single Pulse Avalanche Energy 1.3 J
Tj
Tstg
Operating Junction Temperature
Storage Temperature -55to175 °C
TO-220 / I2PAK / D2PAK
Rthj-case Thermal Resistance Junction-case Max 0.48 °C/W
Rthj-pcb Thermal Resistance Junction-pcb Max See Curve on page 4 °C/W
Rthj-amb Thermal Resistance Junction-ambient (Free air) Max 62.5 °C/W
TlMaximum Lead Temperature For Soldering Purpose 300 °C
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source
Breakdown Voltage ID= 250 µA, VGS = 0 40 V
IDSS Zero Gate Voltage
Drain Current (VGS =0) V
DS = Max Rating
VDS = Max Rating, TC= 125 °C 1
10 µA
µA
IGSS Gate-body Leakage
Current (VDS =0) V
GS = ± 20V ±100 nA
VGS(th) Gate Threshold Voltage VDS =V
GS,I
D= 250µA 24V
R
DS(on) Static Drain-source On
Resistance VGS =10V,I
D= 90 A 0.0037 Ω
3/13
STP200NF04 - STB200NF04 - STB200NF04-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (1) Forward Transconductance VDS =15V
,I
D=90A 150 S
C
iss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS =25V,f=1MHz,V
GS = 0 5100
1600
600
pF
pF
pF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on)
tr
Turn-on Delay Time
Rise Time VDD =20V,I
D=90A
R
G= 4.7ΩVGS =10V
(Resistive Load see, Figure 3)
30
320 ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =20V,I
D= 120 A,
VGS =10V
(see, Figure 4)
170
30
45
210 nC
nC
nC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(off)
tf
Turn-off Delay Time
Fall Time VDD =20V,I
D=90A
R
G=4.7ΩV
GS =10V
(Resistive Load see, Figure 3)
140
120 ns
ns
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD
ISDM (2) Source-drain Current
Source-drain Current (pulsed)
120
480 A
A
VSD (1) Forward On Voltage ISD = 120 A, VGS =0 1.3 V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 120 A, di/dt = 100A/µs
VDD =30V,T
j= 150°C
(see test circuit, Figure 5)
85
190
4.5
ns
nC
A
vawo
PCB FR4 201 Cu
for SMD Devices
Rtmq
('C/W)
7D
60
mm Footprint
50
40
3D
200 400 500 500 TOOQWZEM
stno
Pd
W) for SMD Devices
At:1sn"
At:125°
At:1DD°C
2 At:7S°C
At:50°c
Wm root rim
$54me ’ T : Pd * PM 7a
zoo 400 600 300 moofigsbu
STP200NF04 - STB200NF04 - STB200NF04-1
4/13
Max Power Dissipation vs PCB Copper Area
Thermal Resistance Rthj-a vs PCB Copper Area
\
AV SINGLE PULSE
10
‘5 =0.5
10
165 HT“
163
W2
16‘
AT=150'C
10°
|ov(5)
5/13
STP200NF04 - STB200NF04 - STB200NF04-1
Allowable Iav vs. Time in Avalanche
The previous curve gives the safe operating area for unclamped inductive loads, single pulse or repetitive,
under the following conditions:
PD(AVE) =0.5*(1.3*BV
DSS *I
AV)
EAS(AR) =P
D(AVE) *t
AV
Where:
IAV is the Allowable Current in Avalanche
PD(AVE) is the Average Power Dissipation in Avalanche (Single Pulse)
tAV istheTimeinAvalanche
To derate above 25 °C, at fixed IAV, the following equation must be applied:
IAV =2*(T
jmax -T
CASE)/(1.3*BV
DSS *Z
th)
Where:
Zth =K*R
th is the value coming from Normalized Thermal Response at fixed pulse width equal to TAV.
JUNCTIDN
RTHERMI
1 Maw 2
H
CTHERMI
7
A? CASE
RTHERME RTHERMB RTHERM4 RTHERMS RTHERME
F‘ 4 w 5 WW 6
H 40* H ”i ‘1
CTHERME
CTHERMB CTHERM4
CTHERMS CTHERMS
:mssnn
STP200NF04 - STB200NF04 - STB200NF04-1
6/13
Parameter Node Value
CTHERM1 1 - 2 1.4958E-3
CTHERM2 2 - 3 3.5074E-2
CTHERM3 3 - 4 5.939E-2
CTHERM4 4 - 5 9.7411E-2
CTHERM5 5 - 6 8.8596E-2
CTHERM6 6 - 7 8.2755E-1
RTHERM1 1 - 2 0.0384
RTHERM2 2 - 3 0.0624
RTHERM3 3 - 4 0.072
RTHERM4 4 - 5 0.0912
RTHERM5 5 - 6 0.1008
RTHERM6 6 - 7 0.1152
SPICE THERMAL MODEL
fl 1.3*V(ER)DSS
V 4.
E L D
b
Va 2—.
2200 13
‘D j \
_ i \\
\
F \
mum \
mam tAv scn5sans
VDD
i
mu
y“ stw)
IKn
st
|G=C0NSY ‘ ‘
=mv=vW ,\ mun fin.“
n . ‘ ‘
2200 J ‘
TMF 2.7K“ Y5
H mm \‘
I; / “95 09d mm)
W Li um l memxn
fight) at stated veg
7/13
STP200NF04 - STB200NF04 - STB200NF04-1
Fig. 4.1: Gate Charge test Waveform
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 3.1: Inductive Load Switching And Diode Re-
covery Times Waveform
lsn
D uns
mm):
D‘U‘T‘
moo
Mr
swam
m. 0,,
h
..
[ .
m :52 IN
V,
av/m
scznnm
STP200NF04 - STB200NF04 - STB200NF04-1
8/13
Fig. 5.1: Diode Recovery Times Waveform
Fig. 5: Test Circuit For Diode Recovery Times
A e
a v b (X3)
‘9 1A\ FDA no 7593344
9/13
STP200NF04 - STB200NF04 - STB200NF04-1
DIM. mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.15 1.70 0.045 0.066
c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137
øP 3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116
TO-220 MECHANICAL DATA
STP200NF04 - STB200NF04 - STB200NF04-1
10/13 1
DIM. mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009
B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067
C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053
D 8.95 9.35 0.352 0.368
D1 8 0.315
E 10 10.4 0.393
E1 8.5 0.334
G 4.88 5.28 0.192 0.208
L 15 15.85 0.590 0.625
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068
M 2.4 3.2 0.094 0.126
R 0.4 0.015
V2 0º 8º
D2PAK MECHANICAL DATA
3
E egg—TV
A
F
a L
W,‘ flat},
fl] 1 L7 A7
9:) - 1
1
+fb{3x) 4k
*9 7,
(aoaagazjsv, a.)
11/13
STP200NF04 - STB200NF04 - STB200NF04-1
DIM. mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
A1 2.40 2.72 0.094 0.107
b 0.61 0.88 0.024 0.034
b1 1.14 1.70 0.044 0.066
c 0.49 0.70 0.019 0.027
c2 1.23 1.32 0.048 0.052
D 8.95 9.35 0.352 0.368
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
E 10 10.40 0.393 0.410
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L2 1.27 1.40 0.050 0.055
TO-262 (I2PAK) MECHANICAL DATA
12.20
Biff g
77777 5 08 :1
E—:E1.60 —l— g
43.50 k
All dimensions ‘—
are in millimeters 9.5 ($0.2)
EAS E QTY
50
BULK QTY
1000
Tube length 532 (10.5)
All dimensions
are in millimeiers
Fuii radius
10 piichea Cumuiahve
iolsiance on was
, / 7 0.2 mm
40 mm min
Access iioie ’ ‘ T
31 Slot location
c$ ’ i
7 N
_ V
Tape slot - Fe measured
in Core for a hub
Iape Slavi
25mm min.
Widlh
' ‘13 " 7 i ,r
, fl
Top \ i
COVE“ x—‘wmfiuma—
J TAPE ‘ a , A
J' 1 i i
v: 4 7 , V a
i 7’ ? i
* y’— i i
. ‘ ‘
A.
User DirectionroirFVegd—
TRL
i
0 0 0 0 0 0 0 0 0
FEED DIRECT‘ON
H Center line
oi cavity
R min,
Bending radius
Ky—
STP200NF04 - STB200NF04 - STB200NF04-1
12/13
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix ”T4”)*
D2PAK FOOTPRINT
* on sales type
DIM. mm inch
MIN. MAX. MIN. MAX.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197
BASE QTY BULK QTY
1000 1000
REEL MECHANICAL DATA
DIM. mm inch
MIN. MAX. MIN. MAX.
A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626
D 1.5 1.6 0.059 0.063
D1 1.59 1.61 0.062 0.063
E 1.65 1.85 0.065 0.073
F11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0.075 0.082
R 50 1.574
T 0.25 0.35 0.0098 0.0137
W23.7 24.3 0.933 0.956
TAPE MECHANICAL DATA
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STP200NF04 - STB200NF04 - STB200NF04-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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© 2003 STMicroelectronics - Printed in Italy - All Rights Reserved
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