2N5484/5485/5486 MMBF5484/5485/5486 Datasheet by ON Semiconductor
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N-Channel RF Amplifier
This device IS designed primarily lor electronic Switching
applications such as low On Resistance analog swncriing
Sourced from Process 50
Absolute Maxi mum Ratings* rA:25’c unlessolrierwisenoied
Symbol Parameter Value Units
V35 Drain-Gate Voltage 25 V
VSS GaierSource Voltage , 25 V
'5; Forward Gate Current 10 rnA
r; ,Tsia Operating and Storage Junction Temperature Range 755 to + iso c
'inese iaiings areiimmng values above which thesemceahilflyotany semiconductor device maybe impaired
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2i image are steamy statelimits Thetamysriouldhe oonsulledun wolicahonsinvclving pulsedcrlcmdur/ :ycleopemnons
Thermal Characteristics TA:25‘Cunlessulrierwisenmed
Symbol Characteristic Max Units
2N5484-5486 'MMBF5484-5486
PD Total Dewce Dissipation 350 225 mW
Derate above 25 C 2 3 1 3 mWi°C
mic Thermal Resistance, Junction to Case I25 Ci‘W
RN; Thermal Resistance, Junction to Ambient 357 556 CW
‘DevicemmntnomiFRAPCEHE Xi 6“XDD§
2N5484/5485/5486 MMBF5484/5485/5486 —
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N5484/5485/5486 MMBF5484/5485/5486 Rev. 1.0.0 1
February 2009
2N5484/5485/5486 MMBF5484/5485/5486
N-Channel RF Amplifier
(contrnued)
ElectricalCharacteristics (4:25‘Cunlessorherwrsenoted
Symbol Parameter Test Conditions Min Typ Max Units
OFF CHARACTERISTICS
Vemss GaterSource Breakdown Voltage Io : . I u ”A, VDs : a , 25 V
IGss Gate Reverse Current VGs = , 20 V, V55 = 0 , i 0 nA
VGS:-20VV :0 T514100 ’02 IIA
VGS(am GaterSource Cutoff Voitage V55 = 15 V ID = i0 nA 5484 , 0 3 , 3 0 V
5485 , 0 5 , 4 0 V
5486 - 2 0 - 0 0 V
ON CHARACTERISTICS
Ins; Zero-Gate Voltage Dram Current' V95 : 15 V. Vss : 0 5484 I 0 5 0 ”IA
5485 4 0 IO mA
5486 B 0 20 mA
SMALL SIGNAL CHARACTERISTICS
9,; Forward Transfer Conductance v.35 : I5 v. vGS : 0‘ t: I 0 kHz
5484 3000 6000 Irmhos
5485 3500 7000 umhns
5436 4000 8000 “mm;
Reryrs) Input Conductance Vcs = 5 V. Ves = 0. t: 100 MHZ
5484 100 umhos
Vns : I5V. Ves = 0. t: 400 MHZ
5485 I 5486 1000 umhos
gOS Output Conductance Vns : IS V. V55 : 0. t: 1 0 kHz
5434 50 umhos
5485 50 umhos
5486 75 umhos
RerusI Output Conductance Vcs : I5 v, v55 : 0.1: 100 MHZ
5484 75 Irmhos
Vns = IS V. Ves = 0, I: 400 MHZ
5485 I 5486 I00 umhos
RENE) Forward Transconductance Vcs = l5 V. Veg : 0.1: 100 MHZ
5484 2500 umhns
ers : ISV. V55 : 0.1: 400 MHZ
5435 3000 umhos
5436 3500 umhos
(1rSS Input Capacrtance VD; = ISV. V65 2 0.1: 10 MHZ 5 0 {IF
0,55 Reverse TransierCapacItance |5V. V55 : .t: 1 0 MHZ | 0 pF
Cass Output Capacltance l5 V V55 : J: 1 0 MHZ 2 0 DP
NF Noise Flgure v.35:15 V. Re: I 0 Its).
00 MHZ 6484 3 0 dB
ISV, R5: I 0 km,
400 MHZ 5484 4 0 dB
15 V . R5 = I 0 kt!
I, 00 MHz 5485/5486 2 0 dB
5 V, Re: I 0 K0,
I, 400 MHZ 5485 I 5435 4 0 ‘13
—
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
Rev. 1.0.0 2
N-Channel RF Amplifier
iconilnued)
Typical Characteristics
Transfer Characteristics
A N
m o
< 3="" ,="" t,l="" “mac="" ip-="" 0mm="" curren1="" (mm="" b="" 1.5="" v="" 0="" ,1="" 72="" 73="" 4="" v“.="" gate—source="" voltage(v)="" transconductance="" characteristics="" 55‘s="" 1‘="~25“" c="" ta="" :msvc="" mm="" nu="" -="" transconductance="" (mmms)="" e="" a="" 2="" a="" 5'="" o="" 4="" 72="" 73="" 4="" v“.="" gate-source="" voltagew)="" output="" conductance="" vs="" 7="" drain="" currem="" 1:="" .:="" e="" t="" ‘25":="" 7="" a="" a="" “hz="" v="" —.5.5v="" g="" 10="" s="" 5="" n="" z="" 0="" °="" i="" §="" 5="" u="" 5="" o="" v="71.5v" 905a="" u$01002="" 0050102="" 05="" 1="" 2="" in"="" drain="" current="" [ma]="" 10="" channel="" resistance="" vs="" temperature="" i000="" 5="" 500="" w="" 2="" 300="" e="" 200="" q="" mu="" 5="" z="" 50="" 2="" an="" 'm="" 20="" vms="" 7100pr="" r="" v="ov" iu="" 750="" a="" so="" me="" 150="" ta="" .="" ambient="" temperature="" (c)="" common="" drain-source="" characteristics="" 5="" o="" _="" 1.5.25;="" 34="" tvp="" vew‘]="" :75.uv="" e="" 4="" \u="" ¢fi="" a:="" 3="" 5="" u="" z="" 2="" é="" o="" o="" o="" 2="" o="" 4="" n="" 6="" o="" a="" i="" vm="" ,="" drainvsource="" voltagew)="" transconductance="" parameter="" interaciions="" 545,="" id“="" @v="" ”s="15v," v="" 5‘="" pulse="" rn,="" @vnf="" iudmv.="" v="" a,="" transconductance="" 1="" mmhosl="" idss‘="" drain="" current="" (="" ma)="" vfimm="" @vm="15V,ID=|nA" r0:="" aa="" drain“on‘="" resisrance="" i="" m="" 9h="" 0="" 1="" 7|="" 72="" ,3="" 75="" ,7="" ,10="" vcs'="" gatevsource="" voltagem=""> —
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
Rev. 1.0.0 3
Typical Characteristics (commuea)
gt! 4 rRANscoNnucrANcE [mmmsi
i“ CAPACiYANCE (p5)
c_1c
Transconductance vs Noise Voltage vs Frequency
Drain Current Vm =15v
m : Bw=6.flH1@i=I0Hz‘1n0Hz
VEEOWI =0 r r>1.nk
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DDIOUZ 0050i 02 us 1 2 5 ID 001003 01 03 I 3 ID JD ion
In , DRAIN CURRENHInA) ' “FREQUENCNKHU
capacitance vs Voltage Noise Figure Frequency
5
V=Dr1~1rflMHl 15v ‘
a A
a
"(v =1“) E
3 3
9
u.
can!Ds =ow w
m
5 2
z.
‘5 I
u
u .5 40 .15 20 10 2D 30 so me 200 300 500 moo
VG§»GATE»SOURCE VOLTAGEM r .. FREQUENCHMHz)
Power Dissipation vs.
Ambient Temperature
5 3m: TO-92
“ 200
150
we
P., . POWER DISSI
g
o
o 25 50 75 too 125 We
TEMPERATURE (“Cl
—
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
Rev. 1.0.0 4
N-Channel RF Amplifier
1conunued)
Common Source Characteris ics
Input Admittance
A 10
3 v =15v
E 5 V95 =o
E
w (c5)
2
< t="" e="" 1="" n="" «="" _="" a="" a="" 3="" an,="" )2="" iuo="" 200="" 300="" mo="" 700="" i000="" i="" —frequencv="" (mhz)="" forward="" transadmittance="" t;="" ‘0="" e="" 5="" e="" “i.“="" r:="" w="" ‘u‘.="" z="" e="" 1="" n="" m="" e="" e="" ,5="" «on="" 200="" 300="" 500="" 700="" men="" i="" w="" frequencvwihz]="" output="" admittance="" ouyfut="" conducyance="" (mmnm)="" v="" as="" i00="" 200="" 300="" 500="" 700="" mom="" i="" w="" frequency="" (mhlj="" rsveisg="" transadminance="" :—="" revefge="" transfer="" (mmhas)="" v="" 100="" 200="" 300="" 500="" 700="" i000="" i="" jrequenchmnz)=""> —
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
Rev. 1.0.0 5
N-Channel RF Amplifier
(continued)
Common Gate Characteristics
Input Admittance
vm =15v
v65 =0
(CG)
.. INPUT ADMITI’ANCE (mmlmsi
I
Inc 200 300 500 700 1000
i ,, FREQUENCY (MHz)
Forward Transadmiltance
m
.9”;
Fen/mm YRANSFER 1mmhns)
va
mm 200 300 50B 700 moo
f 7 FREQUENCY (MHIl
Outpui Admittance
v D, -15v _
VGs =
(CG)
I00 200 3430 SEC 700 i000
l W FREQUENCYiMHl]
our PUT CONDUCTA NCE (77! mos)
v
Reverse Transadmittance
vns -15v
v53 :0
(CG)
Vqr REVERSE TRANSFER (mmhos)
mi) 200 300 500 700 1000
i -- FREQUENCY (MHz)
—
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
Rev. 1.0.0 6
FAIRCHILD
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© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
Rev. 1.0.0 7
Rev. I31
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