VRRM V
m 2x 120A
vF v
2 \1 3A
.A 1
\ . h
‘L
N E72873
DSS2x121-0045B
Schottky Diode
Symbol Definition
R a t i n g s
Features / Advantages:
typ. max.
I
FSM
I
R
A
V
1600
IA
V
F
0.62
R0.40 K/W
V
R
=
min.
120
t = 10 ms
Applications:
V
RRM
V
45
120
T
VJ
V°C=
T
VJ
°C=mA
500
Package:
Part number
V
R
=
T
VJ
=°C
I
F
=A
V
T
C
=100°C
d =
P
tot
310 WT
C
°C=
T
VJ
150 °C
-40
V
I
RRM
=
=45
120
120
T
VJ
=45°C
DSS2x121-0045B
V
A
45
V45
25
25
25
max. repetitive reverse voltage
reverse current
forward voltage
virtual junction temperature
total power dissipation
max. forward surge current
Conditions Unit
0.89
T
VJ
°C=25
C
J
j
unction capacitance V= V;5T
100
V
F0
V
0.27
T
VJ
=150°C
r
F
2.6 Ω
f = 1 MHz = °C25
m
V
0.59
T
VJ
=°C
I
F
=A
V
120
0.90
I
F
=A240
I
F
=A240
2x
threshold voltage
slope resistance for power loss calculation only
Backside: isolated
(50 Hz), sine
V
F
=0.59
V
● Housing:
High Performance Schottky Diode
Low Loss and Soft Recovery
Parallel legs
SOT-227B (minibloc)
●
rIndustry standard outline
●
rCu base plate internal DCB isolated
●
rIsolation Voltage 3000 V
●
rEpoxy meets UL 94V-0
●
rRoHS compliant
RVJ
mA
5.86 nF
thermal resistance junction to case
thJC
rectangular 0.5
● Very low Vf
● Extremely low switching losses
● low Irm values
● Improved thermal behaviour
● High reliability circuit operation
● Low voltage peaks for reduced
protection circuits
● Low noise switching
● Rectifiers in switch mode power
supplies (SMPS)
● Free wheeling diode in low voltage
converters
FAV
average forward current
FAV
125
IXYS reserves the right to change limits, conditions and dimensions. 20110603a
Data according to IEC 60747and per diode unless otherwise specified
© 2011 IXYS all rights reserved
L'I IXYS
DSS2x121-0045B
I
RMS
A
per terminal 150
R
thCH
K/W0.10
M
D
Nm1.5
mounting torque 1.1
T
stg
°C150
storage temperature -40
Weight g30
Symbol Definition
Ratings
typ. max.min.Conditions
RMS current
thermal resistance case to heatsink
Unit
Ordering Delivering Mode Base Qty Code Key
Standard
Part Name
DSS2x121-0045B 478334Tube 10
abcde
YYWWZ XXXXXX
Product Marking
Logo Part No.
DateCode Assembly Code
Assembly Line
Marking on Product
DSS2x121-0045B
M
T
Nm1.5
terminal torque 1.1
V
ISOL
V3000t = 1 second
V2500t = 1 minute
isolation voltage
dmm
mmd
10.5 3.2
8.6 6.8
Spp/App
creepage | striking distance on surface | through air terminal to terminal
Spb/Apb
creepage | striking distance on surface | through air terminal to backside
IXYS reserves the right to change limits, conditions and dimensions. 20110603a
Data according to IEC 60747and per diode unless otherwise specified
© 2011 IXYS all rights reserved
MIIIWIH Inch-a
mln nax rrln "ax
31.50 31 00 1.140 1 255
7 30 020 0307 0.323
1.09 4,29 0161 0160
4 09 1 29 0151 0159
409 A 29 0.161 0.169
14.91 15.11 0581' 0595
3012 $30 1105 I193
37 80 38.23 1 400 1.505
11.55 12.22 0460 0451
B 92 9 60 0 35! 037B
0 74 0 84 0.029 0.033
12.50 13.10 0492 0518
2515 25.42 0 990 I 001
1 95 213 0077 0 084
4.05 5.20 0105 02“
26.54 26.90 I 045 1.059
304 142 0.155 0167
4.55 4.05 0119 0191
21 59 25 25 0 960 0.991
-0 05 010 -|] m2 000‘
3.20 5.50 0126 021 T
18 E1 21 [IE 0. 700 0.830
2 50 2 7|] [U198 D105
—— .J —— Nuzm am 934
Lens Head
- K ' Screw [mm
2 am 7935
E
N§DSS2x121-0045B
Outlines SOT-227B (minibloc)
IXYS reserves the right to change limits, conditions and dimensions. 20110603a
Data according to IEC 60747and per diode unless otherwise specified
© 2011 IXYS all rights reserved
L'I IXYS
DSS2x121-0045B
0.0 0.2 0.4 0.6 0.8 1.0
1
10
100
0 1020304050
0.1
1
10
100
1000
10000
04080120160
0
10
20
30
40
50
60
70
80
90
100
110
0.001 0.01 0.1 1 10
0.01
0.1
1
0 40 80 120 160
0
40
80
120
160
0 10203040
100
1000
10000
Single Pulse
DSS2x121-0045B
T
VJ
=150°C
125°C
100°C
75°C
25°C
T
VJ
=
150°C
125°C
25°C
T
VJ
=25°C
D=0.5
0.25
0.17
DC
50°C
0.33
0.08
300
I
F
[A]
V
F
[V]
I
R
[mA]
V
R
[V] V
R
[V]
C
T
[pF]
T
C
[°C] I
F(AV)
[A]
P
(AV)
[W]
Z
thJC
[K/W]
t[s]
Note: All curves are per diode
Fig. 1 Maximum forward voltage
drop characteristics
Fig. 2 Typ. reverse current
I
R
vs. reverse voltage V
R
Fig. 3 Typ. junction capacitance
C
T
vs. reverse voltage V
R
Fig. 4 Average forward current
I
F(AV)
vs. case temperature T
C
Fig. 5 Forward power loss
characteristics
Fig. 6 Transient thermal impedance junction to case at various duty cycles
I
F(AV)
[A]
d =
DC
0.5
0.33
0.25
0.17
0.08
d = 0.5
IXYS reserves the right to change limits, conditions and dimensions. 20110603a
Data according to IEC 60747and per diode unless otherwise specified
© 2011 IXYS all rights reserved
Products related to this Datasheet
DIODE MODULE 45V 120A SOT227B