TB100 Datasheet by WeEn Semiconductors

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TB100

NPN power transistor

30 September 2016 Product data sheet

1. General description

High voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO92)

plastic package intended for use in low power SMPS emitter switching circuits.

2. Features and benefits

•Fast switching

•High base current drive capability

•High voltage capability

•Very low switching and conduction losses

3. Applications

•Emitter-switched low power SMPS circuits

•Self Oscillating Power Supplies

•AC-DC converters

•DC-AC inverters

4. Pinning information

Table 1. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 E emitter

2 C collector

3 B base

123

TO-92 (SOT54)

sym123

5. Ordering information

Table 2. Ordering information

PackageType number

Name Description Version

TB100 TO-92 plastic single-ended leaded (through hole) package; 3 leads SOT54

Table 3. Marklng codes —

WeEn Semiconductors TB100

NPN power transistor

Product data sheet 30 September 2016 2 / 10

6. Marking

Table 3. Marking codes

Type number Marking code

TB100 TB100

TB100 Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IE C 60134). 993535514 Pd ,:& x100% e Pro!(25°C) ml:

WeEn Semiconductors TB100

NPN power transistor

Product data sheet 30 September 2016 3 / 10

7. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCESM collector-emitter peak

voltage

VBE = 0 V - 700 V

VCBO collector-base voltage IE = 0 A - 700 V

ICcollector current DC - 1 A

ICM peak collector current - 2 A

IBbase current - 0.5 A

IBM peak base current - 3 A

Ptot total power dissipation Tlead ≤ 25 °C; Fig. 1 - 2 W

Tstg storage temperature -65 150 °C

Tjjunction temperature - 150 °C

100

Pder

(%)

Tmb (°C)

0 20015050 100

003aae614

Fig. 1. Normalized total power dissipation as a function of mounting base temperature

B100 Table 5. Thermal characteristics gammy

WeEn Semiconductors TB100

NPN power transistor

Product data sheet 30 September 2016 4 / 10

8. Thermal characteristics

Table 5. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-lead) thermal resistance

from junction to lead

- - 60 K/W

Rth(j-a) thermal resistance

from junction to

ambient free air

printed circuit board mounted; lead

length = 4 mm; Fig. 2

- 150 - K/W

aaa-010123

102

10-1

Zth(j-lead)

(K/W)

10-2

tp (s)

10-5 1 1010-1

10-2

10-4 10-3

d =

Fig. 2. Transient thermal impedance from junction to lead as a function of pulse width

B100 Table 6. Characteristics lc:0 Hg. 3 IC:O Hg. 4 lc:10 mA, v Hg. 5 Pg. 6 IC :100 mA, Hg. 5 ﬁg. 6 lc : 0 75 A, v Hg. 5 Pg. 6 IC :1 A, lam7 RL : 75 0‘ V Hg. 7 ﬁg. 8 5557010122 5357010121

WeEn Semiconductors TB100

NPN power transistor

Product data sheet 30 September 2016 5 / 10

9. Characteristics

Table 6. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

VBE = 0 V; VCE = 700 V - 0.8 100 µAICES collector-emitter cut-off

current (base shorted) VBE = 0 V; VCE = 700 V; Tj = 125 °C - 2 500 µA

IEBO emitter-base cut-off

current (collector open)

VEB = 9 V; IC = 0 A; Tlead = 25 °C - 0.05 100 µA

VCEsat collector-emitter

saturation voltage

IC = 0.75 A; IB = 0.15 A; Tlead = 25 °C;

Fig. 3

- 0.24 1 V

VBEsat base-emitter saturation

voltage

IC = 0.75 A; IB = 0.15 A; Tlead = 25 °C;

Fig. 4

- 0.93 1.3 V

IC = 10 mA; VCE = 5 V; Tlead = 25 °C;

Fig. 5; Fig. 6

12 22 32

IC = 100 mA; VCE = 5 V; Tlead = 25 °C;

Fig. 5; Fig. 6

14 24 34

hFE DC current gain

IC = 0.75 A; VCE = 5 V; Tlead = 25 °C;

Fig. 5; Fig. 6

12 15.5 20

Dynamic characteristics (resistive load)

tsstorage time - 2 - µs

tffall time

IC = 1 A; IBon = 0.2 A; IBoff = -0.2 A;

RL = 75 Ω; VBB = -4 V; Tlead = 25 °C;

Fig. 7; Fig. 8 - 320 - ns

IC (A)

10-2 10110-1

aaa-010122

0.8

1.2

0.4

1.6

2.0

VCEsat

(V)

Tj = -35 °C

Tj = 125 °C

Tj = 25 °C

IC / IB = 5

Fig. 3. Collector-emitter saturation voltage as a function

of collector current; typical values

aaa-010121

0.8

0.4

1.2

1.6

VBEsat

(V)

IC (A)

10-2 10110-1

1.0

0.6

0.2

1.4

Tj = 125 °C

Tj = -35 °C

Tj = 25 °C

IC / IB = 5

Fig. 4. Base-emitter saturation voltage as a function of

collector current; typical values

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WeEn Semiconductors TB100

NPN power transistor

Product data sheet 30 September 2016 6 / 10

10-3 10110-2 10-1

102

IC (A)

hFE

Tj= 125 °C

Tj= -35 °C

Tj= 25 °C

VCE = 1 V

aaa-010368

Fig. 5. DC current gain as a function of collector

current; typical values

aaa-010120

10-310110-210-1

102

IC (A)

hFE

Tj = 125 °C

Tj = -35 °C

Tj = 25 °C

VCE = 5 V

Fig. 6. DC current gain as a function of collector

current; typical values

001aab990

10 %

90 %

ton toff

IBon

- IBoff

ICon

tr≤ 30 ns

Fig. 7. Switching times waveforms for resistive load

001aab989

VIM

DUT

VCC

Fig. 8. Test circuit for resistive load switching

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WeEn Semiconductors TB100

NPN power transistor

Product data sheet 30 September 2016 7 / 10

10. Package outline

Fig. 9. Package outline TO-92 (SOT54)

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WeEn Semiconductors TB100

NPN power transistor

Product data sheet 30 September 2016 8 / 10

11. Legal information

Data sheet status

Document

status [1][2]

Product

status [3]

Definition

Objective

[short] data

sheet

Development This document contains data from

the objective specification for product

development.

Preliminary

[short] data

sheet

Qualification This document contains data from the

preliminary specification.

Product

[short] data

sheet

Production This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case of

multiple devices. The latest product status information is available on

the Internet at URL http://www.ween-semi.com.

Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

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Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

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no representation or warranty that such applications will be suitable for the

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Customers are responsible for the design and operation of their applications

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Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those

given in the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

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In the event that customer uses the product for design-in and use in

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Semiconductors’ standard warranty and WeEn Semiconductors’ product

specifications.

TB100

WeEn Semiconductors TB100

NPN power transistor

Product data sheet 30 September 2016 9 / 10

Translations — A non-English (translated) version of a document is for

reference only. The English version shall prevail in case of any discrepancy

between the translated and English versions.

Trademarks

Notice: All referenced brands, product names, service names and

trademarks are the property of their respective owners.

TB100

WeEn Semiconductors TB100

NPN power transistor

Product data sheet 30 September 2016 10 / 10

12. Contents

1. General description......................................................1

2. Features and benefits.................................................. 1

3. Applications.................................................................. 1

4. Pinning information......................................................1

5. Ordering information....................................................1

6. Marking.......................................................................... 2

7. Limiting values............................................................. 3

8. Thermal characteristics............................................... 4

9. Characteristics.............................................................. 5

10. Package outline.......................................................... 7

11. Legal information....................................................... 8

For more information, please visit: http://www.ween-semi.com

For sales office addresses, please send an email to: salesaddresses@ween-semi.com

Date of release: 30 September 2016

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