IPD65R950C6 Datasheet by Infineon Technologies

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(ifineon
MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™C6650V
650VCoolMOS™C6PowerTransistor
IPD65R950C6
DataSheet
Rev.2.0
Final
Industrial&Multimarket
(iflreon Table 1 Key Performance Parameters
2
650VCoolMOS™C6PowerTransistor
IPD65R950C6
Rev.2.0,2013-07-26Final Data Sheet
tab
1
2
3
DPAK
Drain
Pin 2
Gate
Pin 1
Source
Pin 3
1Description
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™C6seriescombinesthe
experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.
TheresultingdevicesprovideallbenefitsofafastswitchingSJMOSFET
whilenotsacrificingeaseofuse.Extremelylowswitchingandconduction
lossesmakeswitchingapplicationsevenmoreefficient,morecompact,
lighterandcooler.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20
andJESD22)
Applications
HardswitchingPWMstagesandresonantswitchingPWMstagesfore.g.
PCSilverbox,Adapter,LCD&PDPTVandLighting.
Table1KeyPerformanceParameters
Parameter Value Unit
VDS @ Tj max 700 V
RDS(on),max 0.95 Ω
Qg,typ 15.3 nC
ID,pulse 12 A
Eoss @ 400V 1.5 µJ
Body diode di/dt 500 A/µs
Type/OrderingCode Package Marking RelatedLinks
IPD65R950C6 PG-TO 252 65C6950 see Appendix A
(ifileon
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650VCoolMOS™C6PowerTransistor
IPD65R950C6
Rev.2.0,2013-07-26Final Data Sheet
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
(imeon 2 Maximum rat iiii
4
650VCoolMOS™C6PowerTransistor
IPD65R950C6
Rev.2.0,2013-07-26Final Data Sheet
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Continuous drain current 1) ID4.5 A TC=25°C
2.8 TC=100°C
Pulsed drain current 2) ID‚pulse 12 A TC=25°C
Avalanche energy, single pulse EAS 50 mJ ID=1.0A,VDD=50V
(see table 10)
Avalanche energy, repetitive EAR 0.15 mJ ID=1.0A,VDD=50V
Avalanche current, repetitive IAR 1.0 A
MOSFET dv/dt ruggedness dv/dt 50 V/ns VDS=0...480V
Gate source voltage VGS -20 20 V static
-30 30 AC (f > 1 Hz)
Operating and storage temperature Tj‚Tstg -55 150 °C
Continuous diode forward current IS3.9 A TC=25°C
Diode pulse current IS‚pulse 12 A TC=25°C
Reverse diode dv/dt 3) dv/dt 15 V/ns
VDS=0...400V,ISD≤ID,
Tj=25°C
(see table 8)
Maximum diode commutation speed dif/dt 500 A/µs
Power dissipation Ptot 37 W TC=25°
1) Limited by Tj max. Maximum duty cycle D=0.75
2) Pulse width tp limited by Tj max
3) Identical low side and high side switch with identical RG
(ifileon Table 3 Thermal characteristics DPAK
5
650VCoolMOS™C6PowerTransistor
IPD65R950C6
Rev.2.0,2013-07-26Final Data Sheet
3Thermalcharacteristics
Table3ThermalcharacteristicsDPAK
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case RthJC 3.4 °C/W
Thermal resistance, junction - ambient 1) RthJA 62 °C/W leaded
35 SMD version, device on PCB,
6cm² cooling area
Soldering temperature, wave- &
reflowsoldering allowed Tsold 260 °C 1.6 mm (0.063 in.) from case for
10s
1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm² copper area (thickness 70µm) for drain connection.
PCB is vertical without air stream cooling.
infineon Table 4 Static characteristics Table 5 Dynamic characteristics Table 6 Gate charge characteristics
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650VCoolMOS™C6PowerTransistor
IPD65R950C6
Rev.2.0,2013-07-26Final Data Sheet
4Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 650 V VGS=0V,ID=1mA
Gate threshold voltage VGS(th) 2.5 3 3.5 V VDS=VGS,ID=0.2mA
Zero gate voltage drain current IDSS 1 µA VDS=650V,VGS=0V,Tj=25°C
10 VDS=650V,VGS=0V,Tj=150°C
Gate-source leakage current IGSS 100 nA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on) 0.855 0.95 ΩVGS=10V,ID=1.5A,Tj=25°C
2.223 VGS=10V,ID=1.5A,Tj=150°C
Gate resistance RG5.5 Ωf=1MHz,opendrain
Table5Dynamiccharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Input capacitance Ciss 328 pF VGS=0V,VDS=100V,f=1MHz
Output capacitance Coss 23 pF
Effective output capacitance, energy
related 1) Co(er) 14 pF VGS=0V,VDS=0...480V
Effective output capacitance, time related
2)
Co(tr) 58.5 pF ID=constant,VGS=0V,
VDS=0...480V
Turn-on delay time td(on) 6.6 ns VDD=400V,VGS=13V,ID=2.2A,
RG=10.2Ω
(see table 9)
Rise time tr5.2 ns
Turn-off delay time td(off) 41 ns
Fall time tf13.6 ns
Table6Gatechargecharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs 1.8 nC VDD=480V,ID=2.2A,
VGS=0to10V
Gate to drain charge Qgd 8 nC
Gate charge total Qg15.3 nC
Gate plateau voltage Vplateau 5.1 V
1) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS
2) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS
(ifileon Table 7 Reverse diode characteristics
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650VCoolMOS™C6PowerTransistor
IPD65R950C6
Rev.2.0,2013-07-26Final Data Sheet
Table7Reversediodecharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Diode forward voltage VSD 0.9 V VGS=0V,IF=2.2A,Tj=25°C
Reverse recovery time trr 226 ns VR=400V,IF=2.2A,
diF/dt=100A/µs
(see table 8)
Reverse recovery charge Qrr 1.3 µC
Peak reverse recovery current Irrm 9.9 A
(imeon
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650VCoolMOS™C6PowerTransistor
IPD65R950C6
Rev.2.0,2013-07-26Final Data Sheet
5Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
TC[°C]
Ptot[W]
0 40 80 120 160
0
5
10
15
20
25
30
35
40
Ptot=f(TC)
Diagram2:Max.transientthermalimpedance
tp[s]
ZthJC[K/W]
10-5 10-4 10-3 10-2 10-1
10-2
10-1
100
101
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
ZthJC=f(tP);parameter:D=tp/T
Diagram3:Safeoperatingarea
VDS[V]
ID[A]
100101102103
10-2
10-1
100
101
102
1 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);VGS>7V;TC=25°C;D=0;parameter:tp
Diagram4:Safeoperatingarea
VDS[V]
ID[A]
100101102103
10-2
10-1
100
101
102
1 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);VGS>7V;TC=80°C;D=0;parameter:tp
(imeon 10V \\
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650VCoolMOS™C6PowerTransistor
IPD65R950C6
Rev.2.0,2013-07-26Final Data Sheet
Diagram5:Typ.outputcharacteristics
VDS[V]
ID[A]
0 5 10 15 20
0
2
4
6
8
10
12
14
16
20 V
10 V
8 V
7 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=25°C;parameter:VGS
Diagram6:Typ.outputcharacteristics
VDS[V]
ID[A]
0 5 10 15 20
0
1
2
3
4
5
6
7
8
920 V
10 V
8 V
7 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=125°C;parameter:VGS
Diagram7:Typ.drain-sourceon-stateresistance
ID[A]
RDS(on)[Ω]
012345678
1
2
3
4
5
6
7
5.5V
5 V 6 V 6.5 V 7 V
10 V
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Diagram8:Drain-sourceon-stateresistance
Tj[°C]
RDS(on)[Ω]
-60 -20 20 60 100 140 180
0
1
2
3
98% typ
RDS(on)=f(Tj);ID=1.5A;VGS=10V
(ifleon
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650VCoolMOS™C6PowerTransistor
IPD65R950C6
Rev.2.0,2013-07-26Final Data Sheet
Diagram9:Typ.transfercharacteristics
VGS[V]
ID[A]
0246810
0
2
4
6
8
10
12
14
150 °C
25 °C
ID=f(VGS);VDS=20V;parameter:Tj
Diagram10:Typ.gatecharge
Qgate[nC]
VGS[V]
0 4 8 12 16
0
1
2
3
4
5
6
7
8
9
10
120 V 480 V
VGS=f(Qgate);ID=1.5Apulsed;parameter:VDD
Diagram11:Avalancheenergy
Tj[°C]
EAS[mJ]
0 50 100 150 200
0
10
20
30
40
50
60
EAS=f(Tj);ID=1.0A;VDD=50V
Diagram12:Drain-sourcebreakdownvoltage
Tj[°C]
VBR(DSS)[V]
-60 -20 20 60 100 140 180
550
575
600
625
650
675
700
725
750
VBR(DSS)=f(Tj);ID=1.0mA
(imeon
11
650VCoolMOS™C6PowerTransistor
IPD65R950C6
Rev.2.0,2013-07-26Final Data Sheet
Diagram13:Typ.capacitances
VDS[V]
C[pF]
0 100 200 300 400 500 600
100
101
102
103
104
Ciss
Coss
Crss
C=f(VDS);VGS=0V;f=1MHz
Diagram14:Typ.Cossstoredenergy
VDS[V]
Eoss[µJ]
0 100 200 300 400 500 600
0.00
0.20
0.40
0.60
0.80
1.00
1.20
1.40
1.60
1.80
2.00
Eoss=f(VDS)
Diagram15:Forwardcharacteristicsofreversediode
VSD[V]
IF[A]
0.0 0.5 1.0 1.5 2.0
10-1
100
101
25 °C
125 °C
IF=f(VSD);parameter:Tj
(ifileon
12
650VCoolMOS™C6PowerTransistor
IPD65R950C6
Rev.2.0,2013-07-26Final Data Sheet
6TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics Diode recovery waveform
t
V ,I
Irrm
IF
VDS
10 %Irrm
trr
tFtS
Q
FQ
S
dIF/ dt
dIrr / dt
VDS(peak)
Q
rr = QF+ Q
S
trr =tF+tS
VDS
IF
VDS
IF
Rg1
Rg2
Rg1 = Rg2
Table9Switchingtimes
Switching times test circuit for inductive load Switching times waveform
VDS
VGS
td(on) td(off)
tr
ton
tf
toff
10%
90%
VDS
VGS
Table10Unclampedinductiveload
Unclamped inductive load test circuit Unclamped inductive waveform
VDS
VD
V(BR)DS
ID
VDS
VDS
ID
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650VCoolMOS™C6PowerTransistor
IPD65R950C6
Rev.2.0,2013-07-26Final Data Sheet
7PackageOutlines
Figure1OutlinePG-TO252,dimensionsinmm/inches
infineon www.infineon.com : www.infineon.com www.infineon.com www' fineon om
14
650VCoolMOS™C6PowerTransistor
IPD65R950C6
Rev.2.0,2013-07-26Final Data Sheet
8AppendixA
Table11RelatedLinks
•IFXC6ProductBrief:www.infineon.com
•IFXC6Portfolio:www.infineon.com
•IFXCoolMOSWebpage:www.infineon.com
•IFXDesignTools:www.infineon.com
(ifileon
15
650VCoolMOS™C6PowerTransistor
IPD65R950C6
Rev.2.0,2013-07-26Final Data Sheet
RevisionHistory
IPD65R950C6
Revision:2013-07-26,Rev.2.0
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2013-07-26 Release of final version
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Edition2011-08-01
Publishedby
InfineonTechnologiesAG
81726München,Germany
©2011InfineonTechnologiesAG
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Information
Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
TechnologiesOffice(www.infineon.com).
Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.

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