1N4151WS Datasheet by Vishay Semiconductor Diodes Division

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1N4151WS

www.vishay.com Vishay Semiconductors

Rev. 1.8, 06-Jul-17 1Document Number: 85847

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Small Signal Fast Switching Diode

DESIGN SUPPORT TOOLS click logo to get started

MECHANICAL DATA

Case: SOD-323

Weight: approx. 4.3 mg

Packaging codes / options:

18/10K per 13" reel (8 mm tape), 10K/box

08/3K per 7" reel (8 mm tape), 15K/box

FEATURES

• Silicon epitaxial planar diode

• Fast switching diode

• AEC-Q101 qualified available

• Base P/N-E3 - RoHS-compliant, commercial

grade

• Base P/N-HE3 - RoHS-compliant, AEC-Q101

qualified

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Note

(1) Valid provided that electrodes are kept at ambient temperature

Available

Models

PARTS TABLE

PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS

1N4151WS 1N4151WS-E3-08 or 1N4151WS-E3-18 Single A5 Tape and reel

1N4151WS-HE3-08 or 1N4151WS-HE3-18

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Reverse voltage VR50 V

Repetitive peak reverse voltage VRRM 75 V

Average rectified current half wave

rectification with resistive load (1) f ≥ 50 Hz IF(AV) 150 mA

Surge current t < 1 s and Tj = 25 °C IFSM 500 mA

Power dissipation (1) Ptot 200 mW

THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Thermal resistance junction to ambient air (1) RthJA 650 K/W

Junction temperature Tj150 °C

Storage temperature range Tstg -65 to +150 °C

Operating temperature range Top -55 to +150 °C

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1N4151WS

www.vishay.com Vishay Semiconductors

Rev. 1.8, 06-Jul-17 2Document Number: 85847

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - Forward Current vs. Forward Voltage

Fig. 2 - Dynamic Forward Resistance vs. Forward Current

Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature

Fig. 4 - Relative Capacitance vs. Reverse Voltage

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

Forward voltage IF = 50 mA VF1V

Leakage current VR = 50 V IR50 nA

VR = 20 V, Tj = 150 °C IR50 μA

Reverse breakdown voltage IR = 5 µA (pulsed) V(BR) 75 V

Capacitance VF = VR = 0 V 2 pF

Reverse recovery time

IF = 10 mA, IR = 10 mA

iR = 1 mA trr 4ns

IF = 10 mA, iR = 1 mA,

VR = 6 V, RL = 100 Ωtrr 2ns

18742

1000

100

0.1

0.01

I- Forward Current (mA)

0 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 20.2

V- Forward Voltage (V)

=100°CT

25 °C

18662

100

1000

10000

r - Dynamic Forward Resistance

f(Ω)

1100.10.01 100

IF- Forward Current (mA)

=25

°CTj

f=1kHz

200

18743

amb

- Ambient Temperature (°C)

1000

800

600

400

200

20 40 60 80 100 120 140 160180

P - Admissible Power Dissipation (mW)

tot

18664

24680

1.1

1.0

0.9

0.8

0.7

)/C

(0 V) - Relative Capacitance (pF)

- Reverse Voltage (V)

=25

°CT

f=1MHz

VISHAY. DwodesAmencasmwshaywm DwodesAswa@wshay,com DwodesEuvogemusnauom www.v\shay,com/doc?91000

1N4151WS

www.vishay.com Vishay Semiconductors

Rev. 1.8, 06-Jul-17 3Document Number: 85847

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 5 - Leakage Current vs. Junction Temperature

Fig. 6 - Admissible Repetitive Peak Forward Current vs. Pulse Duration

18744

100

1000

10000

0 20 40 60 80 100 120 140 160 180 200

I - Leakage Current (nA)

- Junction Temperature (°C)

=50VV

/T T = 1/f=t

FRM

ν=0

0.1

0.2

0.5

10 101

-1

100

-5

1010

-4

-3

-2

18709

I - Admissible Repetitive

FRM

Peak Forward Current (A)

-Pulse Length (s)

VISHAY. ~23“ an ‘ 1m DwodesAmencas@\/wshay.com DwodesAswa@\/wshay.com DwodesEuvogemusnauom www.v\shay.com/doc?91000

1N4151WS

www.vishay.com Vishay Semiconductors

Rev. 1.8, 06-Jul-17 4Document Number: 85847

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

PACKAGE DIMENSIONS in millimeters (inches): SOD-323

Rev. 6 - Date: 23.Sept.2016

17443

Document no.: S8-V-3910.02-001 (4)

Created - Date: 24.August.2004

Footprint recommendation:

0.6 [0.024]

1.1 [0.043]

1.5 [0.059]

2.50 [0.098]

2.85 [0.112]

1.60 [0.063]

1.95 [0.077]

0° - 8°

0.25 [0.010]

0.40 [0.016]

Cathode bar

0.20 [0.008]

0.40 [0.016]

0.8 [0.031]

0.2 [0.008]

1.15 [0.045]

0.10 [0.004]

0.1 [0.004] max.

0.15 [0.006]

1.6 [0.063]

0.8 [0.031] 0.8 [0.031]

— VISHAY. V

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