.ROH'EI
3D
63)
428>
IApplications
Motor driver , LED driver
Power supply
ations
Package .
No. Package size Taping Reel
code (mm
(mnfl
SCR543D CPT3 6595 TL
OAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base volt
Collector cu
‘1 Pw=10ms , single pulse
‘2 Mounted on a substrate
‘3 Tc=25°C
Datasheet
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© 2013 ROHM Co., Ltd. All rights reserved.
2SCR543D
NPN 4.0A 50V Middle Power Transistor
lOutline
lFeatures
1) Suitable for Middle Power Driver
2) Complementary PNP Types : 2SAR543D
3) Low VCE(sat)
VCE(sat)=0.35V(Max.)
(IC/IB=2A/100mA)
4) Lead Free/RoHS Compliant.
lInner circuit
lApplications
Motor driver , LED driver
Power supply
lPackaging specifications
lAbsolute maximum ratings (Ta = 25°C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC
Pulsed
Junction temperature
Range of storage temperature
*1 Pw=10ms , single pulse
*2 Mounted on a substrate
*3 Tc=25°C
Parameter
Value
CPT3
VCEO
50V
IC
4.0A
Basic
ordering
unit (pcs)
Marking
2SCR543D
CPT3
6595
TL
330
16
2,500
CR543
Part No.
Package
Package
size
(mm)
Taping
code
Reel size
(mm)
Tape width
(mm)
Parameter
Symbol
Values
Unit
VCBO
50
V
VCEO
50
V
VEBO
6
V
Collector current
IC
4.0
A
ICP *1
8.0
A
Power dissipation
PD *2
1
W
PD *3
10
W
Tj
150
°C
Tstg
-55 to +150
°C
2SCR543D
(SC-63)
<SOT-428>
Base
Emitter
Collector
Collector
Base
Emitter
1/6
2013.05 - Rev.B
Not Recommended for
New Designs
hing time testé
hing time
use wxarrWAvssom
museum cunnaq
WAVEORM
0
Pw=50lu
DuwcchEsm
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© 2013 ROHM Co., Ltd. All rights reserved.
Data Sheet
2SCR543D
lElectrical characteristics(Ta = 25°C)
*1 Pulsed
*2 See switching time test circuit
lSwitching time test circuit
Unit
V
mA
-
V
Max.
-
V
-
Parameter
Symbol
Conditions
Min.
Typ.
Collector-emitter
breakdown voltage
BVCEO
IC = 1mA
50
-
Collector-base
breakdown voltage
BVCBO
IC = 100mA
50
-
Emitter-base
breakdown voltage
BVEBO
IE = 100mA
6
-
1
mA
Collector cut-off current
ICBO
VCB = 50V
-
-
1
Emitter cut-off current
IEBO
VEB = 4V
-
-
-
V
DC current gain
hFE
VCE = 3V, IC = 100mA
180
-
450
-
Collector-emitter
saturation voltage
VCE(sat) *1
IC = 2A, IB = 100mA
-
0.13
0.35
tf *2
-
85
MHz
Output capacitance
Cob
VCB = 10V, IE = 0A,
f = 1MHz
-
20
-
pF
Transition frequency
fT
VCE = 10V, IE = -500mA
f=100MHZ
-
300
-
ns
ns
Storage time
tstg *2
-
450
-
ns
Turn-on time
ton *2
IC=2A
IB1=200mA
IB2= -200mA
VCC⋍10V
-
50
-
Fall time
2/6
2013.05 - Rev.B
Not Recommended for
New Designs
DC CURRENT
100
10
Veg [V]
Gain vs. Collector Current“)
VCE: 3v
ics
0.2
0.0
0 0.5 1 1.5
COLECTOR TO EMI'I'I'E VOL
Fig.4 DC current
1000
T GAIN : hFE
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© 2013 ROHM Co., Ltd. All rights reserved.
Data Sheet
2SCR543D
lElectrical characteristic curves(Ta = 25°C)
Fig.2 Typical Output Characteristics
1
10
100
1000
10000
0 0.5 1 1.5
VCE= 3V
Ta=125ºC
75ºC
25ºC
-40ºC
0.0
0.2
0.4
0.6
0.8
1.0
0 0.5 1 1.5 2
1.0mA
1.5mA
2.0mA
3.0mA
4.0mA
2.5mA
IB= 0.5mA
Ta=25ºC
5.0mA
10
100
1000
110 100 1000 10000
VCE= 3V
Ta=125ºC
75ºC
25ºC
-40ºC
10
100
1000
110 100 1000 10000
Ta=25ºC
VCE= 5V
3V
Fig.1 Ground Emitter Propagation Characteristics
COLLECTOR CURRENT : IC [mA]
BASE TO EMITTER VOLTAGE : VBE [V]
COLLECTOR CURRENT : IC [A]
COLECTOR TO EMITTE VOLTAGE : VCE [V]
Fig.3 DC Current Gain vs. Collector Current(I)
DC CURRENT GAIN : hFE
COLLECTOR CURRENT : IC [mA]
Fig.4 DC current gain vs. output current (II)
DC CURRENT GAIN : hFE
COLLECTOR CURRENT : IC [mA]
3/6
2013.05 - Rev.B
Not Recommended for
New Designs
BASE- EM ITTE R
SATU RATION VOLT
Voltage
01
'3
g
d 2
0 ‘0 0.001
10000 1 10 100 1000
mA] COLLECTOR CURREN
er Saturation Voltage Fig.8 Gain Band
or Current vs. Emitter
1000
5 3:2
E
;
0
Z
Lu
:3
0
Lu
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© 2013 ROHM Co., Ltd. All rights reserved.
Data Sheet
2SCR543D
lElectrical characteristic curves(Ta = 25°C)
0.1
1
10
110 100 1000 10000
IC / IB = 20
Pulsed
Ta= -40ºC
25ºC
75ºC
125ºC
0.001
0.01
0.1
1
110 100 1000 10000
IC / IB = 20
Ta=125ºC
75ºC
25ºC
-40ºC
0.001
0.01
0.1
1
110 100 1000 10000
Ta=25ºC
IC / IB = 50
20
10
10
100
1000
-10 -100 -1000
Ta=25ºC
VCE= 10V
Fig.5 Collector-Emitter Saturation Voltage
vs. Collector Current (I)
COLLECTOR-EMITTER
SATURATION VOLTAGE : VCE(sat) [V]
COLLECTOR CURRENT : IC [mA]
Fig.6 Collector-Emitter Saturation Voltage
vs. Collector Current (II)
COLLECTOR-EMITTER
SATURATION VOLTAGE : VCE(sat) [V]
COLLECTOR CURRENT : IC [mA]
Fig.7 Base-Emitter Saturation Voltage
vs. Collector Current
BASE-EMITTER
SATURATION VOLTAGE : VBE(sat) [V]
COLLECTOR CURRENT : IC [mA]
Fig.8 Gain Bandwidth Product
vs. Emitter Current
TRANSITION FREQUENCY : fT [MHz]
EMITTER CURRENT :IE [mA]
4/6
2013.05 - Rev.B
Not Recommended for
New Designs
rate)
COLLE
repemive
LECTOR ER V0
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© 2013 ROHM Co., Ltd. All rights reserved.
Data Sheet
2SCR543D
lElectrical characteristic curves(Ta = 25°C)
1
10
100
1000
0.1 1 10 100
Cob
Cib
Ta=25ºC
f=1MHz
IE=0A
IC=0A
0.01
0.1
1
10
0.1 1 10 100
Tc=25ºC
Single non repetitive pulse
10ms
1ms
DC Ta=25ºC
(Mounted on a substrate)
DC
Fig.9 Emitter input capacitance vs.
Emitter-Base Voltage
Collector output capacitance vs.
Collector-Base Voltage
COLLECTOR OUTPUT CAPACITANCE : Cob [pF]
EMITTER INPUT CAPACITANCE : Cib [pF]
COLLECTOR - BASE VOLTAGE : VCB [V]
EMITTER - BASE VOLTAGE : VEB [V]
Fig.10 Safe Operating Area
COLLECTOR CURRENT : IC [A]
COLLECTOR TO EMITTER VOLTAGE : VCE [V]
5/6
2013.05 - Rev.B
Not Recommended for
New Designs
INCHES
0.000
0.087
0.010
0.022
0.197
0.197
0.030
.60 0.016
0.60 0.016
6.70 0.248
5.80 0.213
2.80 0.087
1 .80 0.047
1.00 1 .60 0.039
- 0.25 -
MILIMETERS INCHES
MIN MAX MIN MAX
b5 - 1 .00 - 0.04
W - 5.20 - 0.205
'1 2.50 0.098
'2 5.50 0.21 7
l3 - 10.00 - 0.394
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© 2013 ROHM Co., Ltd. All rights reserved.
Data Sheet
2SCR543D
lDimensions (Unit : mm)
Dimension in mm / inches
CPT3
D
b1
eb
b3
b2
L3
A2
H
A1
A3
c
L1
Lp
x B A
L E L2
l3
l2 l1
b6
b5e
L4
c1
B
A
Pattern of terminal position areas
[Not a recommended pattern of soldering pads]
MIN MAX MIN MAX
A1 0.00 0.15 0.000 0.006
A2 2.20 2.50 0.087 0.098
A3
b0.55 0.75 0.022 0.030
b1 5.00 5.30 0.197 0.209
b2
b3
c0.40 0.60 0.016 0.024
c1 0.40 0.60 0.016 0.024
D6.30 6.70 0.248 0.264
E5.40 5.80 0.213 0.228
e
HE9.00 10.00 0.354 0.394
L2.20 2.80 0.087 0.110
L1 0.80 1.40 0.031 0.055
L2 1.20 1.80 0.047 0.071
L3
L4
Lp 1.00 1.60 0.039 0.063
x- 0.25 - 0.010
MIN MAX MIN MAX
b5 - 1.00 - 0.04
b6 - 5.20 - 0.205
ｌ1 - 2.50 - 0.098
ｌ2 - 5.50 - 0.217
ｌ3 - 10.00 - 0.394
DIM
MILIMETERS
INCHES
0.25
0.010
5.00
0.197
0.75
0.030
2.30
0.091
5.30
0.209
0.90
0.035
DIM
MILIMETERS
INCHES
6/6
2013.05 - Rev.B
Not Recommended for
New Designs
latest specilicar
uality, semicanr
please ta at
lementing redu
res. ROHM shall o
eyond ther g soeoi
r iniormatlon o relrl are
erations oi the P erlpheral
irouits tor mass p .
ended only to s lunctions oi and
ROHM does not , plicltly or implicitly,
rty or other rlg y ROHM or any other
ty whatsoever lor rising out oi use oi
use in general electronic e e (i.e. AV/OA d s, umr
"ling/entertainment as the apoli ated in
ocument are to be Vadlatl
ducts in applicalio
a high deg
act and consult w'
representati
primary eom uioment, trafl crime preye
medical systems, ser ells, and oowe sion systems.
our Products i ns requiring e rellaoii
ment. nuclear power ems. and sub aters.
M shall have no billy lor an ry arisin
the recommended us itions and contained he
ROHM has u re nable care to ensur
document. H OHM does n
shall h siblllty tor a
inform
i e e Products in '
e RaHS Dire
ales olli .H ll have no res
mpllance ole laws or regu
lat When prov
without Ii
rl Trade A
regulations, in
Exchange and F
up This document, in part or in w
ROHITI
SEMIcomuucTcR
R1102
A
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© 2013 ROHM Co., Ltd. All rights reserved.
Notice
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Notes
The information contained herein is subject to change without notice.
Before you use our Products, please contact our sales representative
and verify the latest specifica-
tions :
Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communi-
cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
The Products specified in this document are not designed to be radiation tolerant.
For use of our Products in applications requiring a high degree of reliability (as exemplified
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equipment, medical systems, servers, solar cells, and power transmission systems.
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equipment, nuclear power control systems, and submarine repeaters.
ROHM shall have no responsibility for any damages or injury arising from non-compliance with
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1)
2)
3)
4)
5)
6)
7)
8)
9)
10)
11)
12)
13)
14)
Not Recommended for
New Designs
Products related to this Datasheet
TRANS NPN 50V 4A CPT3