STH270N8F7-2/6, STP270N8F7 Datasheet by STMicroelectronics

View All Related Products | Download PDF Datasheet
This is information on a product in full production.
May 2015 DocID024006 Rev 4 1/22
22
STH270N8F7-2, STH270N8F7-6,
STP270N8F7
N-channel 80 V, 0.0017 Ω typ., 180 A, STripFET™ F7
Power MOSFETs in H2PAK-2, H2PAK-6 and TO-220 packages
Datasheet
production data
Figure 1. Internal schematic diagram
Features
Among the lowest R
DS(on)
on the market
Excellent figure of merit (FoM)
Low C
rss
/C
iss
ratio for EMI immunity
High avalanche ruggedness
Applications
Switching applications
Description
These N-channel Power MOSFETs utilize
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
$0Y
'7$%
*
6
'7$%
*
6
+3$.+3$. 72
123
TAB
1
23
TAB
H
2
PAK-2
TO-220
H
2
PAK-6
1
TAB
7
Order codes V
DS
R
DS(on)
max I
D
STH270N8F7-2
80 V 0.0021 Ω180 ASTH270N8F7-6
STP270N8F7 0.0025 Ω
Table 1. Device summary
Order codes Marking Package Packaging
STH270N8F7-2
270N8F7
H
2
PAK-2 Tape and reel
STH270N8F7-6 H
2
PAK-6
STP270N8F7 TO-220 Tube
www.st.com
Contents STH270N8F7-2, STH270N8F7-6, STP270N8F7
2/22 DocID024006 Rev 4
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5.1 H
2
PAK-2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
5.2 H
2
PAK-6 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
5.3 TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
6 Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
é]
DocID024006 Rev 4 3/22
STH270N8F7-2, STH270N8F7-6, STP270N8F7 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage 80 V
V
GS
Gate-source voltage ± 20 V
I
D(1)
1. Limited by package
Drain current (continuous) 180 A
I
D (1)
Drain current (continuous) at T
C
= 100 °C 180 A
I
DM(2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 720 A
P
TOT (3)
3. This value is rated according to R
thj-c
Total dissipation at T
C
= 25 °C 315 W
E
AS(4)
4. Starting T
j
= 25°C, I
d
= 65 A, V
dd
= 50 V
Single pulse avalanche energy 1.16 J
T
J
Operating junction temperature -55 to 175 °C
T
stg
Storage temperature °C
Table 3. Thermal resistance
Symbol Parameter
Value
Unit
H
2
PAK-2,
H
2
PAK-6 TO-220
R
thj-case
Thermal resistance junction-case 0.48 °C/W
R
thj-pcb (1)
1. When mounted on FR-4 board of 1 inch
2
, 2oz Cu
Thermal resistance junction-pcb 35 °C/W
R
thj-amb
Thermal resistance junction-ambient max 62.5 °C/W
Electrical characteristics STH270N8F7-2, STH270N8F7-6, STP270N8F7
4/22 DocID024006 Rev 4
2 Electrical characteristics
(T
CASE
=25 °C unless otherwise specified)
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage (V
GS
= 0) I
D
= 250 µA 80 V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= 80 V
V
DS
= 80 V; T
C
=125 °C
10
100
µA
µA
I
GSS
Gate body leakage current
(V
DS
= 0) V
GS
= +20 V 100 nA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA 2 4 V
R
DS(on)
Static drain-source on-
resistance
For H
2
PAK-2, H
2
PAK-6:
V
GS
= 10 V, I
D
= 90 A 0.0017 0.0021
Ω
For TO-220:
V
GS
= 10 V, I
D
= 90 A 0.0021 0.0025
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
iss
Input capacitance
V
DS
=50 V, f=1 MHz,
V
GS
=0
- 13600 - pF
C
oss
Output capacitance - 2050 - pF
C
rss
Reverse transfer
capacitance -236 - pF
Q
g
Total gate charge V
DD
=40 V, I
D
= 180 A
V
GS
=10 V
Figure 19
-193 - nC
Q
gs
Gate-source charge - 96 - nC
Q
gd
Gate-drain charge - 46 - nC
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time
V
DD
=40 V, I
D
= 90 A,
R
G
=4.7 Ω, V
GS
= 10 V
Figure 18
-56-ns
t
r
Rise time - 180 - ns
t
d(off)
Turn-off delay time - 98 - ns
t
f
Fall time - 42 - ns
é]
DocID024006 Rev 4 5/22
STH270N8F7-2, STH270N8F7-6, STP270N8F7 Electrical characteristics
Table 7. Source drain diode
Symbol Parameter Test conditions Min Typ. Max Unit
I
SD
Source-drain current - 180 A
I
SDM(1)
1. Pulse width limited by safe operating area
Source-drain current (pulsed) - 720 A
V
SD(2)
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage I
SD
= 90 A, V
GS
=0 - 1.2 V
t
rr
Reverse recovery time I
SD
= 180 A,
di/dt = 100 A/µs,
V
DD
=64 V, T
j
=150 °C
-78 ns
Q
rr
Reverse recovery charge - 182 nC
I
RRM
Reverse recovery current - 4.7 A
m Amsssm mu 150 200
Electrical characteristics (curves) STH270N8F7-2, STH270N8F7-6, STP270N8F7
6/22 DocID024006 Rev 4
3 Electrical characteristics (curves)
Figure 2. Safe operating area for H
2
PAK-2 and
H
2
PAK-6 Figure 3. Safe operating area for TO-220
I
D
10
1
0.1 1V
DS
(V)
10
(A)
Operation in this area is
Limited by max RDS(on)
1ms
10ms
0.1
Tj=175°C
Tc=25°C
Single pulse
100
100µs
AM15670v1
I
D
10
1
0.1 1V
DS
(V)
10
(A)
Operation in this area is
Limited by max RDS(on)
1ms
10ms
0.1
Tj=175°C
Tc=25°C
Single pulse
100
100µs
AM15671v1
Figure 4. Thermal impedance Figure 5. Gate charge vs gate-source voltage
K
10 t
p
(s)
-4 10 -3 10 -2
0.1
10 -5
0.01
AM15684v1
Single pulse
d=0.5
0.05
0.02
0.01
0.2
0.1
V
GS
6
4
2
0
050 Q
g
(nC)
(V)
150
8
100
10
V
DD
=40V
I
D
=180A
12
200
AM15683v1
Figure 6. Output characteristics for TO-220 Figure 7. Transfer characteristics for TO-220
I
D
150
100
50
0
04V
DS
(V)
(A)
26
200
250
6V
7V
V
GS
=8, 9, 10V
300
5V
8
350
AM15673v1
I
D
150
100
50
0
04V
GS
(V)
8
(A)
26
200
250
300
350
13579
V
DS
=2V
AM15709v1
\ l \ \ é]
DocID024006 Rev 4 7/22
STH270N8F7-2, STH270N8F7-6, STP270N8F7 Electrical characteristics (curves)
Figure 8. Output characteristics for H
2
PAK-2
and H
2
PAK-6 Figure 9. Transfer characteristics for H
2
PAK-2
and H
2
PAK-6
I
D
150
100
50
0
04V
DS
(V)
(A)
26
200
250
6V
7V
V
GS
=8, 9, 10V
300
5V
8
350
AM15672v1
I
D
150
100
50
0
04V
GS
(V)
8
(A)
26
200
250
300
350
13579
V
DS
=2V
AM15682v1
Figure 10. Normalized V
(BR)DSS
vs temperature Figure 11. Static drain-source on-resistance for
H
2
PAK-2 and H
2
PAK-6
Figure 12. Static drain-source on-resistance for
TO-220 Figure 13. Capacitance variations
V
(BR)DSS
-75 T
J
(°C)
(norm)
-50 0
-25
0.96
0.98
1
1.02
1.04
I
D
=1 mA
25 50 75 100 125 150
AM15681v1
R
DS(on)
1.72
1.70
1.68
1.66
040 I
D
(A)
(mΩ)
20 60
1.74
140
80 100 120 160 180
V
GS
=10V
AM15674v1
R
DS(on)
2.15
2.10
2.05
2.00
040 I
D
(A)
(mΩ)
20 60
2.20
140
80 100 120 160 180
V
GS
=10V
AM15675v1
C
6000
4000
2000
0
020 VDS(V)
(pF)
10 30
Ciss
Coss
Crss
40 50 60
8000
10000
12000
14000
16000
AM15676v1
Electrical characteristics (curves) STH270N8F7-2, STH270N8F7-6, STP270N8F7
8/22 DocID024006 Rev 4
Figure 14. Source-drain diode forward
characteristics Figure 15. Normalized gate threshold voltage vs
temperature
Figure 16. Normalized on-resistance vs
temperature for H
2
PAK-2 and H
2
PAK-6 Figure 17. Normalized on-resistance vs
temperature for TO-220
V
SD
040 I
SD
(A)
(V)
20 100
60 80
0.5
0.6
0.7
0.8
0.9
1T
J
=-50°C
T
J
=150°C
T
J
=25°C
120 140 160
AM15680v1
V
GS(th)
0.7
0.6
0.5
0.4
-75 T
J
(°C)
(norm)
-50
0.8
75
-25 125
I
D
=250µA
025 50 100 150
0.9
1
1.1
1.2
AM15677v1
R
DS(on)
1.2
1
0.8
0.6
T
J
(°C)
(norm)
1.4
0.4
-75 -50 75
-25 125
025 50 100
I
D
=90 A
V
GS
=10 V
150
1.6
1.8
2
AM15678v1
R
DS(on)
1.2
1
0.8
0.6
T
J
(°C)
(norm)
1.4
0.4
-75 -50 75
-25 125
025 50 100
I
D
=90 A
V
GS
=10 V
150
1.6
1.8
AM15679v1
DocID024006 Rev 4 9/22
STH270N8F7-2, STH270N8F7-6, STP270N8F7 Test circuits
4 Test circuits
Figure 18. Switching times test circuit for
resistive load Figure 19. Gate charge test circuit
Figure 20. Test circuit for inductive load
switching and diode recovery times Figure 21. Unclamped inductive load test circuit
Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
μF
3.3
μFVDD
AM01469v1
VDD
47kΩ1kΩ
47kΩ
2.7kΩ
1kΩ
12V
Vi=20V=VGMAX
2200
μF
PW
IG=CONST
100Ω
100nF
D.U.T.
VG
AM01470v1
A
D
D.U.T.
S
B
G
25 Ω
AA
BB
RG
G
FAST
DIODE
D
S
L=100μH
μF
3.3 1000
μFVDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200
μF
3.3
μFVDD
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
AM01473v1
VDS
ton
tdon tdoff
toff
tf
tr
90%
10%
10%
0
0
90%
90%
10%
VGS
Package information STH270N8F7-2, STH270N8F7-6, STP270N8F7
10/22 DocID024006 Rev 4
5 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
is an ST trademark.
é] L4 H1 325 Gauge Hare L3
DocID024006 Rev 4 11/22
STH270N8F7-2, STH270N8F7-6, STP270N8F7 Package information
5.1 H
2
PAK-2 package information
Figure 24. H²PAK-2 package information
8159712_C
Package information STH270N8F7-2, STH270N8F7-6, STP270N8F7
12/22 DocID024006 Rev 4
Table 8. H²PAK-2 package mechanical data
Dim. mm
Min. Typ. Max.
A4.30
-
4.80
A1 0.03 0.20
C1.17 1.37
e4.98 5.18
E0.50 0.90
F0.78 0.85
H 10.00 10.40
H1 7.40 7.80
L 15.30 15.80
L1 1.27 1.40
L2 4.93 5.23
L3 6.85 7.25
L4 1.5 1.7
M2.6 2.9
R0.20 0.60
V0° 8°
72.20 de‘: 0.0% 2.54 mm .m 7.60
DocID024006 Rev 4 13/22
STH270N8F7-2, STH270N8F7-6, STP270N8F7 Package information
Figure 25. H²PAK-2 recommended footprint (in mm)
8159712_C
Package information STH270N8F7-2, STH270N8F7-6, STP270N8F7
14/22 DocID024006 Rev 4
5.2 H
2
PAK-6 package information
Figure 26. H²PAK-6 package outline
8159693_Rev_F
é]
DocID024006 Rev 4 15/22
STH270N8F7-2, STH270N8F7-6, STP270N8F7 Package information
Table 9. H²PAK-6 package mechanical data
Dim. mm
Min. Typ. Max.
A4.30
-
4.80
A1 0.03 0.20
C1.17 1.37
e2.34 2.74
e1 4.88 5.28
e2 7.42 7.82
E0.45 0.60
F0.50 0.70
H 10.00 10.40
H1 7.40 7.80
L 14.75 15.25
L1 1.27 1.40
L2 4.35 4.95
L3 6.85 7.25
L4 1.5 1.75
M1.90 2.50
R0.20 0.60
V0° 8°
975 7220 Z62 150 7690
Package information STH270N8F7-2, STH270N8F7-6, STP270N8F7
16/22 DocID024006 Rev 4
Figure 27. H²PAK-6 recommended footprint (dimensions are in mm)
E] 9P ._ E —» F»—.— A o f I O - H; I D ‘fl DI L20 L )P Q g L30 7‘ E; I V br(X3)J LI L +41 ‘ i Y 2 J ‘ 4. e ‘7‘ C L «— b (X3)
DocID024006 Rev 4 17/22
STH270N8F7-2, STH270N8F7-6, STP270N8F7 Package information
5.3 TO-220 type A package information
Figure 28. TO-220 type A package outline
BW\SH$B5HYB7
Package information STH270N8F7-2, STH270N8F7-6, STP270N8F7
18/22 DocID024006 Rev 4
Table 10. TO-220 type A mechanical data
Dim. mm
Min. Typ. Max.
A4.40 4.60
b0.61 0.88
b1 1.14 1.70
c0.48 0.70
D 15.25 15.75
D1 1.27
E 10 10.40
e2.40 2.70
e1 4.95 5.15
F1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L13 14
L1 3.50 3.93
L20 16.40
L30 28.90
P3.75 3.85
Q2.65 2.95
é]
DocID024006 Rev 4 19/22
STH270N8F7-2, STH270N8F7-6, STP270N8F7 Packing information
6 Packing information
Figure 29. Tape
P1
A0 D1
P0
F
W
E
D
B0
K0
T
User direction of feed
P2
10 pitches cumulative
tolerance on tape +/- 0.2 mm
User direction of feed
R
Bending radius
Top cover
tape
AM08852v2
Packing information STH270N8F7-2, STH270N8F7-6, STP270N8F7
20/22 DocID024006 Rev 4
Figure 30. Reel
Table 11. H²PAK-2 and H²PAK-6 tape and reel mechanical data
Tape Reel
Dim. mm Dim. mm
Min. Max. Min. Max.
A0 10.5 10.7 A 330
B0 15.7 15.9 B 1.5
D 1.5 1.6 C 12.8 13.2
D1 1.59 1.61 D 20.2
E 1.65 1.85 G 24.4 26.4
F 11.4 11.6 N 100
K0 4.8 5.0 T 30.4
P0 3.9 4.1
P1 11.9 12.1 Base qty 1000
P2 1.9 2.1 Bulk qty 1000
R50
T 0.25 0.35
W 23.7 24.3
A
D
B
Full radius G measured at hub
C
N
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
T
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
é]
DocID024006 Rev 4 21/22
STH270N8F7-2, STH270N8F7-6, STP270N8F7 Revision history
7 Revision history
Table 12. Document revision history
Date Revision Changes
03-Dec-2012 1First release.
09-Apr-2013 2
Modified: R
DS(on) max
values on Features table, I
DSS
, I
GSS
values
on Table 4, R
DS(on)
value for H
2
PAK-2, the entire typical values on
Table 5 and 6, V
SD
test conditions and max values, T
RR
, Q
RR
,
I
RRM
typical values on Table 7
– Inserted:Section 3: Electrical characteristics (curves)
Document status promoted to preliminary data to production data
Added: H
2
PAK-6 package
Minor text changes
11-Oct-2013 3
Modified: C
rss
typical value in Table 5
Updated: Section 5: Package information
Updated: Figure 18, 19, 20 and 21
Minor text changes
14-May-2015 4 Updated title, features and description in cover page.
Minor text changes
STH270N8F7-2, STH270N8F7-6, STP270N8F7
22/22 DocID024006 Rev 4
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and
improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on
ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order
acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or
the design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2015 STMicroelectronics – All rights reserved

Products related to this Datasheet

MOSFET N-CH 80V 180A H2PAK-6
MOSFET N CH 80V 180A TO220
MOSFET N-CH 80V 180A H2PAK-2
MOSFET N-CH 80V 180A H2PAK-6
MOSFET N-CH 80V 180A H2PAK-2
MOSFET N-CH 80V 180A H2PAK-6
MOSFET N-CH 80V 180A H2PAK-2