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Vishay Siliconix
Si3585DV
Document Number: 71184
S09-2275-Rev. D, 02-Nov-09
www.vishay.com
1
N- and P-Channel 20-V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω)I
D (A)
N-Channel 20 0.125 at VGS = 4.5 V 2.4
0.200 at VGS = 2.5 V 1.8
P-Channel - 20 0.200 at VGS = - 4.5 V - 1.8
0.340 at VGS = - 2.5 V - 1.2
TSOP-6
Top View
6
4
1
2
3
5
2.85 mm
3 mm
D2G2
S1S2
D1G1
Ordering Information: Si3585DV-T1-E3 (Lead (Pb)-free)
Si3585DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
1
G
1
S
1
N-Channel MOSFET
S2
G2
D2
P-Channel MOSFET
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol
N-Channel P-Channel
Unit 10 s Steady State 10 s Steady State
Drain-Source Voltage VDS 20 - 20 V
Gate-Source Voltage VGS ± 12 ± 12
Continuous Drain Current (TJ = 150 °C)aTA = 25 °C ID
2.4 2.0 - 1.8 - 1.5
A
TA = 70 °C 1.7 1.4 - 1.3 - 1.2
Pulsed Drain Current IDM 8- 7
Continuous Source Current (Diode Conduction)aIS1.05 0.75 - 1.05 - 0.75
Maximum Power DissipationaTA = 25 °C PD
1.15 0.83 1.15 0.83 W
TA = 70 °C 0.59 0.53 0.59 0.53
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol
N-Channel P-Channel
Unit Typ. Max. Typ. Max.
Maximum Junction-to-Ambientat ≤ 10 s RthJA
93 110 93 110
°C/W
Steady State 130 150 130 150
Maximum Junction-to-Foot (Drain) Steady State RthJF 75 90 75 90
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Document Number: 71184
S09-2275-Rev. D, 02-Nov-09
Vishay Siliconix
Si3585DV
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Gate Threshold Voltage VGS(th)
VDS = VGS, ID = 250 µA N-Ch 0.6 V
VDS = VGS, ID = - 250 µA P-Ch - 0.5
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 12 V N-Ch ± 100 nA
P-Ch ± 100
Zero Gate Voltage Drain Current IDSS
VDS = 16 V, VGS = 0 V N-Ch 1
µA
VDS = - 16 V, VGS = 0 V P-Ch - 1
VDS = 16 V, VGS = 0 V, TJ = 55 °C N-Ch 5
VDS = - 16 V, VGS = 0 V, TJ = 55 °C P-Ch - 5
On-State Drain CurrentaID(on) VDS ≥ 5 V, VGS = 4.5 V N-Ch 5 A
VDS ≤ - 5 V, VGS = - 4.5 V P-Ch - 5
Drain-Source On-State ResistanceaRDS(on)
VGS = 4.5 V, ID = 2.4 A N-Ch 0.100 0.125
Ω
VGS = - 4.5 V, ID = - 1.8 A P-Ch 0.160 0.200
VGS = 2.5 V, ID = 1.8 A N-Ch 0.160 0.200
VGS = - 2.5 V, ID = - 1.2 A P-Ch 0.280 0.340
Forward Transconductanceagfs
VDS = 5 V, ID = 2.4 A N-Ch 5 S
VDS = - 5 V, ID = - 1.8 A P-Ch 3.6
Diode Forward VoltageaVSD
IS = 1.05 A, VGS = 0 V N-Ch 0.80 1.10 V
IS = - 1.05 A, VGS = 0 V P-Ch - 0.83 - 1.10
Dynamicb
Total Gate Charge Qg N-Channel
VDS = 10 V, VGS = 4.5 V, ID = 2.4 A
P-Channel
VDS = - 10 V, VGS = - 4.5 V, ID = - 1.8 A
N-Ch 2.1 3.2
nC
P-Ch 2.7 4.0
Gate-Source Charge Qgs
N-Ch 0.3
P-Ch 0.4
Gate-Drain Charge Qgd N-Ch 0.4
P-Ch 0.6
Tur n - O n D e l ay Time td(on) N-Channel
VDD = 10 V, RL = 10 Ω
ID ≅ 1 A, VGEN = 4.5 V, Rg = 6 Ω
P-Channel
VDD = - 10 V, RL = 10 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω
N-Ch 10 17
ns
P-Ch 11 17
Rise Time tr
N-Ch 30 50
P-Ch 34 50
Turn-Off Delay Time td(off) N-Ch 14 25
P-Ch 19 30
Fall Time tf
N-Ch 6 12
P-Ch 24 36
Source-Drain
Reverse Recovery Time trr
IF = 1.05 A, dI/dt = 100 A/µs N-Ch 30 50
IF = - 1.05 A, dI/dt = 100 A/µs P-Ch 20 40
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Document Number: 71184
S09-2275-Rev. D, 02-Nov-09
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Vishay Siliconix
Si3585DV
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
2
4
6
8
10
012345
VGS = 4.5 V thru 3.5 V
1.5 V
VDS
- Drain-to-Source Voltage (V)
- Drain Current (A)ID
2.5 V
3 V
2 V
0.0
0.1
0.2
0.3
0.4
0.5
01234567
VGS = 4.5 V
VGS = 2.5 V
- On-Resistance (Ω)RDS(on)
ID
- Drain Current (A)
0.0
0.9
1.8
2.7
3.6
4.5
0.0 0.5 1.0 1.5 2.0 2.5
VDS = 10 V
ID = 2.4 A
- Gate-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
VGS
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
2
4
6
8
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
TC = - 55 °C
125 °C
VGS
- Gate-to-Source Voltage (V)
- Drain Current (A)ID
25 °C
0
50
100
150
200
250
300
048121620
Crss
Coss
Ciss
VDS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50 - 25 0 25 50 75 100 125 150
VGS = 4.5 V
ID = 2.4 A
TJ - Junction T emperature (°C)
(Normalized)
- On-Resistance RDS(on)
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Document Number: 71184
S09-2275-Rev. D, 02-Nov-09
Vishay Siliconix
Si3585DV
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
1.2 1.5
0.1
1
10
0 0.3 0.6 0.9
TJ = 25 °C
TJ = 150 °C
VSD
- Source-to-Drain Voltage (V)
- Source Current (A)IS
- 0.6
- 0.4
- 0.2
0.0
0.2
0.4
- 50 - 25 0 25 50 75 100 125 150
ID = 250 µA
Variance (V)VGS(th)
TJ - Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.00
0.08
0.16
0.24
0.32
0.40
012345
VGS - Gate-to-Source Voltage (V)
- On-Resistance (Ω)RDS(on)
ID = 2.4 A
ID = 1 A
0.01
0
1
6
8
2
4
10 300.1
Power (W)
Time (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
2
1
0.1
0.01
10-3 10-2 1 10 60010-1
10-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
100
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 87 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
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Document Number: 71184
S09-2275-Rev. D, 02-Nov-09
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Vishay Siliconix
Si3585DV
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Normalized Thermal Transient Impedance, Junction-to-Foot
10-3 10-2 11010-1
10-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
Output Characteristics
On-Resistance vs. Drain Current
0
2
4
6
8
10
012345
VGS = 4.5 V thru 4 V
1.5 V
2 V
VDS
- Drain-to-Source Voltage (V)
- Drain Current (A)ID
2.5 V
3 V
3.5 V
0.0
0.1
0.2
0.3
0.4
0.5
0.6
01234567
VGS = 4.5 V
VGS = 2.5 V
- On-Resistance (Ω)RDS(on)
ID - Drain Current (A)
VGS = 3.6 V
Transfer Characteristics
Capacitance
0
2
4
6
8
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
TC = - 55 °C
125 °C
VGS
- Gate-to-Source Voltage (V)
- Drain Current (A)ID
25 °C
0
90
180
270
360
450
048121620
Crss
Coss
Ciss
VDS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
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Document Number: 71184
S09-2275-Rev. D, 02-Nov-09
Vishay Siliconix
Si3585DV
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Gate Charge
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0
0.9
1.8
2.7
3.6
4.5
0.0 0.6 1.2 1.8 2.4 3.0
VDS = 10 V
ID = 2.4 A
- Gate-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
VGS
1.2 1.5
0.1
1
10
0 0.3 0.6 0.9
TJ = 25 °C
TJ = 150 °C
VSD
- Source-to-Drain Voltage (V)
- Source Current (A)IS
- 0.4
- 0.2
0.0
0.2
0.4
0.6
- 50 - 25 0 25 50 75 100 125 150
ID = 250 µA
Variance (V)VGS(th)
TJ - Temperature (°C)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.4
0.6
0.8
1.0
1.2
1.4
1.8
1.6
- 50 - 25 0 25 50 75 100 125 150
VGS = 10 V
ID = 2.4 A
TJ - Junction Temperature (°C)
(Normalized)
- On-Resistance RDS(on)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
012345
VGS - Gate-to-Source Voltage (V)
- On-Resistance (Ω)RDS(on)
ID = 1.8 A
ID = 1.2 A
0.01
0
1
6
8
2
4
10 300.1
Power (W)
Time (s)
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Document Number: 71184
S09-2275-Rev. D, 02-Nov-09
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Vishay Siliconix
Si3585DV
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71184.
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
2
1
0.1
0.01
10-3 10-2 1 10 60010-1
10-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
100
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 87 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Normalized Thermal Transient Impedance, Junction-to-Foot
10-3 10-2 11010-1
10-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
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Revision: 08-Feb-17 1Document Number: 91000
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