DMP21D5UFB4 Datasheet by Diodes Incorporated

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DBDESO Lug...» mm DMP21D5UFB4 Document number 0535284 Rev 572 NS 1 a! 6 www.diodes.com
DMP21D5UFB4
Document number: DS35284 Rev. 5 - 2
1 of 6
www.diodes.com May 2012
© Diodes Incorporated
DMP21D5UFB4
ADVANCE INFORMATION
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS R
DS(on) max ID
TA = 25°C
-20V
1.0Ω @ VGS = -4.5V -700mA
1.5Ω @ VGS = -2.5V -600mA
2.0Ω @ VGS = -1.8V -500mA
3.0Ω @ VGS = -1.5V -380mA
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
DC-DC Converters
Power management functions
Features and Benefits
Low On-Resistance
Very Low Gate Threshold Voltage VGS(TH), 1.0V max
Low Input Capacitance
Fast Switching Speed
Ultra-Small Surfaced Mount Package
Ultra-low package profile, 0.4mm maximum package height
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: X2-DFN1006-3
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.001 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMP21D5UFB4-7B X2-DFN1006-3 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
X2-DFN1006-3
Top View
Internal Schematic
Bottom View Equivalent Circuit
NS = Product Type Marking Code
Top View
Bar Denotes Gate
and Source Side
Source
Gate
Protection
Diode
Gate
Drain
D
S
G
ESD PROTECTED
DMP21D5UFB4 2006 Ducumenl number 0535254 Rev 572 www.diodes.cnm
DMP21D5UFB4
Document number: DS35284 Rev. 5 - 2
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© Diodes Incorporated
DMP21D5UFB4
ADVANCE INFORMATION
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage VDSS -20 V
Gate-Source Voltage VGSS ±8 V
Continuous Drain Current (Note 6) VGS = -4.5V
Steady
State TA = 25°C
TA = 70°C ID -700
-600 mA
t<10s TA = 25°C
TA = 70°C ID -850
-670 mA
Continuous Drain Current (Note 6) VGS = -1.8V
Steady
State TA = 25°C
TA = 70°C ID -500
-400 mA
t<10s TA = 25°C
TA = 70°C ID -600
-550 mA
Pulsed Drain Current (10μs pulse, duty cycle = 1%) IDM -2 A
Maximum Body Diode continuous Current IS -800 mA
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) PD 0.46 W
Thermal Resistance, Junction to Ambient (Note 5) Steady state RθJA 279 °C/W
t<10s 210 °C/W
Total Power Dissipation (Note 6) PD 0.95 W
Thermal Resistance, Junction to Ambient (Note 6) Steady state RθJA 134 °C/W
t<10s 100 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BVDSS -20 - - V
VGS = 0V, ID = -1mA
Zero Gate Voltage Drain Current TJ = 25°C IDSS - - -100 nA
VDS = -20V, VGS = 0V
Gate-Source Leakage IGSS - - ±1.0
μA VGS = ±5V, VDS = 0V
- - ±5.0 VGS = ±8V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage VGS
(
th
)
-0.5 - -1.0 V
VDS = VGS, ID = -250μA
Static Drain-Source On-Resistance RDS (ON)
- 0.67 0.97
Ω
VGS = -5V, ID = -100mA
0.7 1.0 VGS = -4.5V, ID = -100mA
- 0.9 1.5 VGS = -2.5V, ID = -80mA
- 1.2 2.0 VGS = -1.8V, ID = -40mA
- 1.5 3.0 VGS = -1.5V, ID = -30mA
- 5 - VGS = -1.2V, ID = -1mA
Forward Transfer Admittance |Yfs| - 0.7 - S
VDS = -3V, ID = -100mA
Diode Forward Voltage VSD - -0.75 -1.2 V VGS = 0V, IS = -330mA,
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance Ciss - 46.1 -
pF VDS = 10V, VGS = 0V,
f = 1.0MHz
Output Capacitance Coss - 7.2 -
Reverse Transfer Capacitance Crss - 4.9 -
Gate Resistance R
g
- 14.3 - Ω VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge VGS = -4.5V Q
g
- 0.5 -
nC VDS = -10V, ID = -250mA
Gate-Source Charge Q
g
s - 0.09 -
Gate-Drain Charge Q
g
d - 0.09 -
Turn-On Delay Time tD
(
on
)
- 8.5 -
ns
VDD = -3V, VGS = -2.5V,
RL = 300, RG = 25,
ID = -100mA
Turn-On Rise Time t
r
- 4.3 -
Turn-Off Delay Time tD
(
off
)
- 20.2 -
Turn-Off Fall Time tf - 19.2 -
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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DMP21D5UFB4
Document number: DS35284 Rev. 5 - 2
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DMP21D5UFB4
ADVANCE INFORMATION
012345
-V , DRAIN -SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
DS
-I , D
AIN
EN
(A)
D
0
0.2
0.4
0.6
0.8
1.0
-V , GATE SOURCE VOLTAGE(V)
Fig. 2 Typical Transfer Characteristics
GS
-I , D
AI
E
(A)
D
0
0.2
0.4
0.6
0.8
0 0.5 1.0 1.5 2.0 2.5 3.0
T =
A
85 C
°
T =
A
25 C
°
T = -55C
A
°
T =
A
150 C
°
T =
A
125 C
°
V= -5V
DS
1.0
-I , DRAIN SOURCE CURRENT
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
D
,D
AIN-S
U
CE
N-
ESISTANCE( )
DS(ON)
Ω
0
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
0 0.2 0.4 0.6 0.8 1.0
V = 2.5V
GS
-
V = 4.5V
GS
-
V = -1.8V
GS
2.0
1.0
-I , DRAIN SOURCE CURRENT (A)
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
D
, D
AIN-S
U
CE
N-
ESISTANCE( )
DS(ON)
Ω
0
0.2
0.4
0.6
0.8
1.2
1.4
1.6
0 0.2 0.4 0.6 0.8 1
T = 150°C
A
T =
A
-55°C
T =
A
85°C
T =
A
125°C
T = 2
A
5°C
1.0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
°
Fig. 5 On-Resistance Variation with Temperature
R , DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
DS(ON)
0.5
0.7
0.9
1.1
1.3
1.5
1.7
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
°
Fig. 6 On-Resistance vs.Temperature
, D
AI
-S
E
-
ESIS
A
E ( )
DS(ON)
Ω
0
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.0
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DMP21D5UFB4
Document number: DS35284 Rev. 5 - 2
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© Diodes Incorporated
DMP21D5UFB4
ADVANCE INFORMATION
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-50 -25 0 25 50 75 100 125 150
-V ,
A
E
ES
LD V
L
A
E (V)
GS(th)
T , JUNCTION TEMPERATURE ( C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
J
°
I = -250µA
D
I= -1mA
D
-I , SOURCE CURRENT (A)
S
-V , SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
SD
0
0.2
0.4
0.6
0.8
0.4 0.6 0.8 1.0 1.2
1.0
T= 25C
A
°
1
10
100
0 5 10 15 20
-V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 9 Typical Junction Capacitance
f = 1MHz
C
iss
C
oss
C
rss
,
N
I
N
A
A
I
AN
E (
T
1
10
100
1,000
-V , DRAIN-SOURCE VOLTAGE(V)
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
DS
-I , LEAKA
G
E
C
U
R
R
EN
T
(nA)
DSS
T = 1
A
25 C
°
048121620
T = 8
A
5C
°
T = 2
A
5C
°
T = 1
A
50 C
°
0.1 1 10 100
-V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 11 SOA, Safe Operation Area
P = 10ms
W
-I , DRAIN CURRENT (A)
D
T = 150 C
T= 25C
Single Pulse
J(MAX)
A
°
°
0.001
0.01
0.1
1
P = 10s
W
DC
P=1s
W
P = 100ms
W
R
Limited
DS(ON)
P=1ms
W
P = 100µs
W
0
1
2
3
4
5
6
7
8
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Q , TOTAL GATE CHARGE (nC)
Fig. 12 Gate-Charge Characteristics
g
-V ,
G
A
T
E-S
O
U
R
C
E V
O
L
T
A
G
E (V)
GS
§ E g E m m E E g m 3 ¢ 4%: g I‘— —>‘ f + f + + <— —="">l<—> DMP21D5UFB4 5046 Document number 0535284 Rev 572 www.diodes.com
DMP21D5UFB4
Document number: DS35284 Rev. 5 - 2
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© Diodes Incorporated
DMP21D5UFB4
ADVANCE INFORMATION
0.001
0.01
0.1
1
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIME (sec)
Fig. 13 Transient Thermal Resistance
R (t) = r(t) * R
R=141C/W
Duty Cycle, D = t1/t2
θ
JA
°
θ
θ
JA
JA
r(t),
ANSIEN
E
MAL
ESIS
AN
E
D = 0.9
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
Single Pulse
Package Outline Dimensions
Suggested Pad Layout
X2-DFN1006-3
Dim Min Max Typ
A 0.40
A1 0 0.05 0.02
b1 0.10 0.20 0.15
b2 0.45 0.55 0.50
D 0.95 1.05 1.00
E 0.55 0.65 0.60
e 0.35
L1 0.20 0.30 0.25
L2 0.20 0.30 0.25
L3 0.40
All Dimensions in mm
Dimensions Value (in mm)
Z 1.1
G1 0.3
G2 0.2
X 0.7
X1 0.25
Y 0.4
C 0.7
Y
C
G1
G2
X
X
1
Z
L2
A1
Eb2
L1L3
D
e
b1
A
DMP21D5UFB4
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DMP21D5UFB4
ADVANCE INFORMATION
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
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LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
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