Toshiba Semiconductor and Storage Single FETs, MOSFETs

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of 1,153

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
T2N7002AK,LM MOSFET N-CH 60V 200MA SOT23 Toshiba Semiconductor and Storage	125,797 In Stock	1 : $0.19000 Cut Tape (CT) 3,000 : $0.03579 Tape & Reel (TR)	U-MOSVII-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	200mA (Ta)	4.5V, 10V	3.9Ohm @ 100mA, 10V	2.1V @ 250µA	0.35 nC @ 4.5 V	±20V	17 pF @ 10 V	-	320mW (Ta)	150°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
T2N7002BK,LM MOSFET N-CH 60V 400MA SOT23-3 Toshiba Semiconductor and Storage	137,419 In Stock	1 : $0.21000 Cut Tape (CT) 3,000 : $0.03849 Tape & Reel (TR)	U-MOSVII-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	400mA (Ta)	4.5V, 10V	1.5Ohm @ 100mA, 10V	2.1V @ 250µA	0.6 nC @ 4.5 V	±20V	40 pF @ 10 V	-	320mW (Ta)	150°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
SSM3K15AMFV,L3F MOSFET N-CH 30V 100MA VESM Toshiba Semiconductor and Storage	133,262 In Stock	1 : $0.32000 Cut Tape (CT) 8,000 : $0.05435 Tape & Reel (TR)	U-MOSIII	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	100mA (Ta)	2.5V, 4V	3.6Ohm @ 10mA, 4V	1.5V @ 100µA	-	±20V	13.5 pF @ 3 V	-	150mW (Ta)	150°C (TJ)	-	-	Surface Mount	VESM	SOT-723
SSM3K35CTC,L3F MOSFET N-CH 20V 250MA CST3C Toshiba Semiconductor and Storage	90,161 In Stock	1 : $0.34000 Cut Tape (CT) 10,000 : $0.05657 Tape & Reel (TR)	U-MOSIII	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	250mA (Ta)	1.2V, 4.5V	1.1Ohm @ 150mA, 4.5V	1V @ 100µA	0.34 nC @ 4.5 V	±10V	36 pF @ 10 V	-	500mW (Ta)	150°C (TJ)	-	-	Surface Mount	CST3C	SC-101, SOT-883
SSM3K56FS,LF MOSFET N-CH 20V 800MA SSM Toshiba Semiconductor and Storage	4,079,850 In Stock	1 : $0.44000 Cut Tape (CT) 3,000 : $0.09041 Tape & Reel (TR)	U-MOSVII-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	800mA (Ta)	1.5V, 4.5V	235mOhm @ 800mA, 4.5V	1V @ 1mA	1 nC @ 4.5 V	±8V	55 pF @ 10 V	-	150mW (Ta)	150°C (TJ)	-	-	Surface Mount	SSM	SC-75, SOT-416
SSM3J372R,LF MOSFET P-CH 30V 6A SOT23F Toshiba Semiconductor and Storage	62,419 In Stock	1 : $0.49000 Cut Tape (CT) 3,000 : $0.10322 Tape & Reel (TR)	U-MOSVI	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	6A (Ta)	1.8V, 10V	42mOhm @ 5A, 10V	1.2V @ 1mA	8.2 nC @ 4.5 V	+12V, -6V	560 pF @ 15 V	-	1W (Ta)	150°C	-	-	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
SSM3J56MFV,L3F MOSFET P-CH 20V 800MA VESM Toshiba Semiconductor and Storage	155,408 In Stock	1 : $0.51000 Cut Tape (CT) 8,000 : $0.09141 Tape & Reel (TR)	U-MOSVI	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	800mA (Ta)	1.2V, 4.5V	390mOhm @ 800mA, 4.5V	-	-	±8V	100 pF @ 10 V	-	150mW (Ta)	150°C (TJ)	-	-	Surface Mount	VESM	SOT-723
SSM3J334R,LF MOSFET P-CH 30V 4A SOT23F Toshiba Semiconductor and Storage	42,898 In Stock	1 : $0.51000 Cut Tape (CT) 3,000 : $0.10532 Tape & Reel (TR)	U-MOSVI	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	4A (Ta)	4V, 10V	71mOhm @ 3A, 10V	2V @ 100µA	5.9 nC @ 10 V	±20V	280 pF @ 15 V	-	1W (Ta)	150°C (TJ)	-	-	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
SSM3K339R,LF MOSFET N-CH 40V 2A SOT-23F Toshiba Semiconductor and Storage	1,091 In Stock	1 : $0.51000 Cut Tape (CT) 3,000 : $0.10532 Tape & Reel (TR)	U-MOSVII-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	2A (Ta)	1.8V, 8V	185mOhm @ 1A, 8V	1.2V @ 1mA	1.1 nC @ 4.2 V	±12V	130 pF @ 10 V	-	1W (Ta)	150°C (TJ)	-	-	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
SSM3K56ACT,L3F MOSFET N-CH 20V 1.4A CST3 Toshiba Semiconductor and Storage	68,873 In Stock	1 : $0.52000 Cut Tape (CT) 10,000 : $0.09231 Tape & Reel (TR)	U-MOSVII-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	1.4A (Ta)	1.5V, 4.5V	235mOhm @ 800mA, 4.5V	1V @ 1mA	1 nC @ 4.5 V	±8V	55 pF @ 10 V	-	500mW (Ta)	150°C (TJ)	-	-	Surface Mount	CST3	SC-101, SOT-883
SSM3J356R,LF MOSFET P-CH 60V 2A SOT-23F Toshiba Semiconductor and Storage	100,863 In Stock	1 : $0.58000 Cut Tape (CT) 3,000 : $0.12182 Tape & Reel (TR)	U-MOSVI	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	2A (Ta)	4V, 10V	300mOhm @ 1A, 10V	2V @ 1mA	8.3 nC @ 10 V	+10V, -20V	330 pF @ 10 V	-	1W (Ta)	150°C (TJ)	-	-	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
SSM3J328R,LF MOSFET P-CH 20V 6A SOT23F Toshiba Semiconductor and Storage	42,983 In Stock	1 : $0.58000 Cut Tape (CT) 3,000 : $0.12558 Tape & Reel (TR)	U-MOSVI	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	6A (Ta)	1.5V, 4.5V	29.8mOhm @ 3A, 4.5V	1V @ 1mA	12.8 nC @ 4.5 V	±8V	840 pF @ 10 V	-	1W (Ta)	150°C (TJ)	-	-	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
SSM3J358R,LF MOSFET P-CH 20V 6A SOT23F Toshiba Semiconductor and Storage	34,291 In Stock	1 : $0.64000 Cut Tape (CT) 3,000 : $0.13588 Tape & Reel (TR)	U-MOSVII	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	6A (Ta)	1.8V, 8V	22.1mOhm @ 6A, 8V	1V @ 1mA	38.5 nC @ 8 V	±10V	1331 pF @ 10 V	-	1W (Ta)	150°C (TJ)	-	-	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
SSM3J338R,LF MOSFET P-CH 12V 6A SOT23F Toshiba Semiconductor and Storage	69,398 In Stock	1 : $0.69000 Cut Tape (CT) 3,000 : $0.14574 Tape & Reel (TR)	U-MOSVII	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	12 V	6A (Ta)	1.8V, 8V	17.6mOhm @ 6A, 8V	1V @ 1mA	19.5 nC @ 4.5 V	±10V	1400 pF @ 6 V	-	1W (Ta)	150°C (TJ)	-	-	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
SSM3J117TU,LF MOSFET P-CHANNEL 30V 2A UFM Toshiba Semiconductor and Storage	28,478 In Stock	1 : $0.69000 Cut Tape (CT) 3,000 : $0.14770 Tape & Reel (TR)	U-MOSII	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	2A (Ta)	4V, 10V	117mOhm @ 1A, 10V	2.6V @ 1mA	-	±20V	280 pF @ 15 V	-	500mW (Ta)	150°C	-	-	Surface Mount	UFM	3-SMD, Flat Leads
SSM3J351R,LF MOSFET P-CH 60V 3.5A SOT-23F Toshiba Semiconductor and Storage	10,660 In Stock	1 : $0.75000 Cut Tape (CT) 3,000 : $0.16510 Tape & Reel (TR)	U-MOSVI	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	3.5A (Ta)	4V, 10V	134mOhm @ 1A, 10V	2V @ 1mA	15.1 nC @ 10 V	+10V, -20V	660 pF @ 10 V	-	2W (Ta)	150°C	-	-	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
SSM3J133TU,LF MOSFET P-CH 20V 5.5A UFM Toshiba Semiconductor and Storage	47,217 In Stock	1 : $0.80000 Cut Tape (CT) 3,000 : $0.17461 Tape & Reel (TR)	U-MOSVI	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	5.5A (Ta)	1.5V, 4.5V	29.8mOhm @ 3A, 4.5V	1V @ 1mA	12.8 nC @ 4.5 V	±8V	840 pF @ 10 V	-	500mW (Ta)	150°C (TJ)	-	-	Surface Mount	UFM	3-SMD, Flat Leads
SSM6J501NU,LF MOSFET P-CH 20V 10A 6UDFNB Toshiba Semiconductor and Storage	101,199 In Stock	1 : $0.84000 Cut Tape (CT) 3,000 : $0.18590 Tape & Reel (TR)	U-MOSVI	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	10A (Ta)	1.5V, 4.5V	15.3mOhm @ 4A, 4.5V	1V @ 1mA	29.9 nC @ 4.5 V	±8V	2600 pF @ 10 V	-	1W (Ta)	150°C (TJ)	-	-	Surface Mount	6-UDFNB (2x2)	6-WDFN Exposed Pad
SSM6J511NU,LF MOSFET P-CH 12V 14A 6UDFNB Toshiba Semiconductor and Storage	43,092 In Stock	1 : $0.85000 Cut Tape (CT) 3,000 : $0.18777 Tape & Reel (TR)	U-MOSVII	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	12 V	14A (Ta)	-	9.1mOhm @ 4A, 8V	1V @ 1mA	47 nC @ 4.5 V	-	3350 pF @ 6 V	-	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	6-UDFNB (2x2)	6-WDFN Exposed Pad
SSM3K341TU,LF MOSFET N-CH 60V 6A UFM Toshiba Semiconductor and Storage	46,557 In Stock	1 : $0.95000 Cut Tape (CT) 3,000 : $0.21177 Tape & Reel (TR)	U-MOSVIII-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	6A (Ta)	4V, 10V	36mOhm @ 4A, 10V	2.5V @ 100µA	9.3 nC @ 10 V	±20V	550 pF @ 10 V	-	1.8W (Ta)	175°C	-	-	Surface Mount	UFM	3-SMD, Flat Leads
SSM3K341R,LF MOSFET N-CH 60V 6A SOT-23F Toshiba Semiconductor and Storage	176,384 In Stock	1 : $0.96000 Cut Tape (CT) 3,000 : $0.21541 Tape & Reel (TR)	U-MOSVIII-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	6A (Ta)	4V, 10V	36mOhm @ 5A, 10V	2.5V @ 100µA	9.3 nC @ 10 V	±20V	550 pF @ 10 V	-	1.2W (Ta)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
SSM3K2615R,LF MOSFET N-CH 60V 2A SOT23F Toshiba Semiconductor and Storage	30,238 In Stock	1 : $0.97000 Cut Tape (CT) 3,000 : $0.22086 Tape & Reel (TR)	π-MOSV	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	2A (Ta)	3.3V, 10V	300mOhm @ 1A, 10V	2V @ 1mA	-	±20V	150 pF @ 10 V	-	1W (Ta)	150°C (TJ)	Automotive	AEC-Q101	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
SSM3K361R,LF MOSFET N-CH 100V 3.5A SOT-23F Toshiba Semiconductor and Storage	12,791 In Stock	1 : $1.04000 Cut Tape (CT) 3,000 : $0.23887 Tape & Reel (TR)	U-MOSVIII-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	3.5A (Ta)	4.5V, 10V	69mOhm @ 2A, 10V	2.5V @ 100µA	3.2 nC @ 4.5 V	±20V	430 pF @ 15 V	-	1.2W (Ta)	175°C	-	-	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
SSM3J351R,LXHF AECQ MOSFET PCH -60V -3.5A SOT23 Toshiba Semiconductor and Storage	40,231 In Stock	1 : $1.26000 Cut Tape (CT) 3,000 : $0.29504 Tape & Reel (TR)	U-MOSVI	Tape & Reel (TR) Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	60 V	3.5A (Ta)	4V, 10V	134mOhm @ 1A, 10V	2V @ 1mA	15.1 nC @ 10 V	+10V, -20V	660 pF @ 10 V	-	1W (Ta)	150°C	Automotive	AEC-Q101	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
SSM3K341R,LXHF AECQ MOSFET NCH 60V 6A SOT23F Toshiba Semiconductor and Storage	38,920 In Stock	1 : $1.33000 Cut Tape (CT) 3,000 : $0.31394 Tape & Reel (TR)	U-MOSVIII-H	Tape & Reel (TR) Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	6A (Ta)	4V, 10V	36mOhm @ 5A, 10V	2.5V @ 100µA	9.3 nC @ 10 V	±20V	550 pF @ 10 V	-	1.2W (Ta)	175°C	Automotive	AEC-Q101	Surface Mount	SOT-23F	SOT-23-3 Flat Leads

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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