Single FETs, MOSFETs

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of 12,434

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

LND150N3-G MOSFET N-CH 500V 30MA TO92-3 Microchip Technology	1,219 In Stock	1 : $0.89000 Bag	-	Bag	Active	N-Channel	MOSFET (Metal Oxide)	500 V	30mA (Tj)	0V	1000Ohm @ 500µA, 0V	-	-	±20V	10 pF @ 25 V	Depletion Mode	740mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
IRFZ24NPBF MOSFET N-CH 55V 17A TO220AB Infineon Technologies	3,665 In Stock	1 : $1.04000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	55 V	17A (Tc)	10V	70mOhm @ 10A, 10V	4V @ 250µA	20 nC @ 10 V	±20V	370 pF @ 25 V	-	45W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IRF530NPBF MOSFET N-CH 100V 17A TO220AB Infineon Technologies	58,482 In Stock	1 : $1.35000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	17A (Tc)	10V	90mOhm @ 9A, 10V	4V @ 250µA	37 nC @ 10 V	±20V	920 pF @ 25 V	-	70W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IRFB7545PBF MOSFET N-CH 60V 95A TO220 Infineon Technologies	54,941 In Stock	1 : $1.42000 Tube	HEXFET®, StrongIRFET™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	95A (Tc)	6V, 10V	5.9mOhm @ 57A, 10V	3.7V @ 100µA	110 nC @ 10 V	±20V	4010 pF @ 25 V	-	125W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220	TO-220-3
IRLB8721PBF MOSFET N-CH 30V 62A TO220AB Infineon Technologies	21,358 In Stock	1 : $1.55000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	30 V	62A (Tc)	4.5V, 10V	8.7mOhm @ 31A, 10V	2.35V @ 25µA	13 nC @ 4.5 V	±20V	1077 pF @ 15 V	-	65W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IRFU5305PBF MOSFET P-CH 55V 31A IPAK Infineon Technologies	10,253 In Stock	1 : $1.57000 Tube	HEXFET®	Tube	Active	P-Channel	MOSFET (Metal Oxide)	55 V	31A (Tc)	10V	65mOhm @ 16A, 10V	4V @ 250µA	63 nC @ 10 V	±20V	1200 pF @ 25 V	-	110W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	IPAK (TO-251AA)	TO-251-3 Short Leads, IPak, TO-251AA
IRF640NPBF MOSFET N-CH 200V 18A TO220AB Infineon Technologies	66,430 In Stock	1 : $1.58000 Tube	HEXFET®	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	200 V	18A (Tc)	10V	150mOhm @ 11A, 10V	4V @ 250µA	67 nC @ 10 V	±20V	1160 pF @ 25 V	-	150W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IRLZ14PBF MOSFET N-CH 60V 10A TO220AB Vishay Siliconix	3,644 In Stock	1 : $1.58000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	10A (Tc)	4V, 5V	200mOhm @ 6A, 5V	2V @ 250µA	8.4 nC @ 5 V	±10V	400 pF @ 25 V	-	43W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IPA60R360P7SXKSA1 MOSFET N-CH 600V 9A TO220 Infineon Technologies	3,901 In Stock	1 : $1.79000 Tube	CoolMOS™ P7	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	9A (Tc)	10V	360mOhm @ 2.7A, 10V	4V @ 140µA	13 nC @ 10 V	±20V	555 pF @ 400 V	-	22W (Tc)	-40°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
IRLZ44NPBF MOSFET N-CH 55V 47A TO220AB Infineon Technologies	17,703 In Stock	1 : $1.89000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	55 V	47A (Tc)	4V, 10V	22mOhm @ 25A, 10V	2V @ 250µA	48 nC @ 5 V	±16V	1700 pF @ 25 V	-	3.8W (Ta), 110W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IRFZ44NPBF MOSFET N-CH 55V 49A TO220AB Infineon Technologies	4,735 In Stock	1 : $1.94000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	55 V	49A (Tc)	10V	17.5mOhm @ 25A, 10V	4V @ 250µA	63 nC @ 10 V	±20V	1470 pF @ 25 V	-	94W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IRF540NPBF MOSFET N-CH 100V 33A TO220AB Infineon Technologies	146,618 In Stock	1 : $1.97000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	33A (Tc)	10V	44mOhm @ 16A, 10V	4V @ 250µA	71 nC @ 10 V	±20V	1960 pF @ 25 V	-	130W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IRF530PBF MOSFET N-CH 100V 14A TO220AB Vishay Siliconix	7,899 In Stock	1 : $2.00000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	14A (Tc)	10V	160mOhm @ 8.4A, 10V	4V @ 250µA	26 nC @ 10 V	±20V	670 pF @ 25 V	-	88W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IRFZ44EPBF MOSFET N-CH 60V 48A TO220AB Infineon Technologies	13,663 In Stock	1 : $2.01000 Tube	HEXFET®	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	60 V	48A (Tc)	10V	23mOhm @ 29A, 10V	4V @ 250µA	60 nC @ 10 V	±20V	1360 pF @ 25 V	-	110W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IRL540NPBF MOSFET N-CH 100V 36A TO220AB Infineon Technologies	11,764 In Stock	1 : $2.03000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	36A (Tc)	4V, 10V	44mOhm @ 18A, 10V	2V @ 250µA	74 nC @ 5 V	±16V	1800 pF @ 25 V	-	140W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IRF5305PBF MOSFET P-CH 55V 31A TO220AB Infineon Technologies	37,659 In Stock	1 : $2.04000 Tube	HEXFET®	Tube	Active	P-Channel	MOSFET (Metal Oxide)	55 V	31A (Tc)	10V	60mOhm @ 16A, 10V	4V @ 250µA	63 nC @ 10 V	±20V	1200 pF @ 25 V	-	110W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IRF9540NPBF MOSFET P-CH 100V 23A TO220AB Infineon Technologies	11,088 In Stock	1 : $2.06000 Tube	HEXFET®	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	23A (Tc)	10V	117mOhm @ 11A, 10V	4V @ 250µA	97 nC @ 10 V	±20V	1300 pF @ 25 V	-	140W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IRFD9120PBF MOSFET P-CH 100V 1A 4DIP Vishay Siliconix	50,319 In Stock	1 : $2.23000 Tube	-	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	1A (Ta)	10V	600mOhm @ 600mA, 10V	4V @ 250µA	18 nC @ 10 V	±20V	390 pF @ 25 V	-	1.3W (Ta)	-55°C ~ 175°C (TJ)	-	-	Through Hole	4-HVMDIP	4-DIP (0.300", 7.62mm)
IRF730PBF MOSFET N-CH 400V 5.5A TO220AB Vishay Siliconix	29,216 In Stock	1 : $2.23000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	400 V	5.5A (Tc)	10V	1Ohm @ 3.3A, 10V	4V @ 250µA	38 nC @ 10 V	±20V	700 pF @ 25 V	-	74W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IRF1010NPBF MOSFET N-CH 55V 85A TO220AB Infineon Technologies	7,974 In Stock	1 : $2.25000 Tube	HEXFET®	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	55 V	85A (Tc)	10V	11mOhm @ 43A, 10V	4V @ 250µA	120 nC @ 10 V	±20V	3210 pF @ 25 V	-	180W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IRF3205PBF MOSFET N-CH 55V 110A TO220AB Infineon Technologies	27,551 In Stock	1 : $2.37000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	55 V	110A (Tc)	10V	8mOhm @ 62A, 10V	4V @ 250µA	146 nC @ 10 V	±20V	3247 pF @ 25 V	-	200W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IRFD9020PBF MOSFET P-CH 60V 1.6A 4DIP Vishay Siliconix	9,086 In Stock	1 : $2.38000 Tube	-	Tube	Active	P-Channel	MOSFET (Metal Oxide)	60 V	1.6A (Ta)	10V	280mOhm @ 960mA, 10V	4V @ 1µA	19 nC @ 10 V	±20V	570 pF @ 25 V	-	1.3W (Ta)	-55°C ~ 175°C (TJ)	-	-	Through Hole	4-HVMDIP	4-DIP (0.300", 7.62mm)
IRF1010EZPBF MOSFET N-CH 60V 75A TO220AB Infineon Technologies	10,274 In Stock	1 : $2.40000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	75A (Tc)	10V	8.5mOhm @ 51A, 10V	4V @ 100µA	86 nC @ 10 V	±20V	2810 pF @ 25 V	-	140W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IRF3710PBF MOSFET N-CH 100V 57A TO220AB Infineon Technologies	5,602 In Stock	1 : $2.41000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	57A (Tc)	10V	23mOhm @ 28A, 10V	4V @ 250µA	130 nC @ 10 V	±20V	3130 pF @ 25 V	-	200W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IRLU3110ZPBF MOSFET N-CH 100V 42A IPAK Infineon Technologies	3,916 In Stock	1 : $2.62000 Tube	HEXFET®	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	100 V	42A (Tc)	4.5V, 10V	14mOhm @ 38A, 10V	2.5V @ 100µA	48 nC @ 4.5 V	±16V	3980 pF @ 25 V	-	140W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	IPAK (TO-251AA)	TO-251-3 Short Leads, IPak, TO-251AA

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.

Single FETs, MOSFETs

Single FETs, MOSFETs

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