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Product Overview
Digi-Key Part Number IRLD120PBF-ND
Quantity Available 1,016
Can ship immediately
Manufacturer

Manufacturer Part Number

IRLD120PBF

Description MOSFET N-CH 100V 1.3A 4-DIP
Expanded Description N-Channel 100V 1.3A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 11 Weeks
Documents & Media
Datasheets IRLD120
Video File MOSFET Technologies for Power Conversion
EDA / CAD Models ? Download from Accelerated Designs
Catalog Page 1267 (SG2011-EN PDF)
Product Attributes Select All
Categories
Manufacturer

Vishay Siliconix

Series -
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 490pF @ 25V
Vgs (Max) ±10V
FET Feature -
Power Dissipation (Max) 1.3W (Ta)
Rds On (Max) @ Id, Vgs 270 mOhm @ 780mA, 5V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Package / Case 4-DIP (0.300", 7.62mm)
 
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Additional Resources
Standard Package ? 100
Other Names *IRLD120PBF

06:11:38 1/20/2017

Price & Procurement
 

Quantity
All prices are in SGD.
Price Break Unit Price Extended Price
1 1.13000 1.13
10 0.99100 9.91
25 0.93120 23.28
100 0.76010 76.01
250 0.70604 176.51
500 0.60088 300.44
1,000 0.48071 480.71
2,500 0.43564 1,089.11
5,000 0.40560 2,027.99

Submit a request for quotation on quantities greater than those displayed.

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