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Product Overview
Digi-Key Part Number C2M0080120D-ND
Quantity Available 4,639
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Manufacturer Part Number


Description MOSFET N-CH 1200V 31.6A TO247
Expanded Description N-Channel 1200V (1.2kV) 36A (Tc) 192W (Tc) Through Hole TO-247-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 8 Weeks
Documents & Media
Datasheets C2M0080120D
Mfg Application Notes SiC MOSFET Isolated Gate Driver
Featured Product Cree - Silicon Carbide Power MOSFETs
SpeedFit™ Online Simulator
Product Attributes Select All


Series C2M™
Packaging ? Bulk ?
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Vgs(th) (Max) @ Id 4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 62nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 1000V
Vgs (Max) +25V, -10V
FET Feature -
Power Dissipation (Max) 192W (Tc)
Rds On (Max) @ Id, Vgs 98 mOhm @ 20A, 20V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
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Additional Resources
Standard Package ? 30

20:34:37 3/25/2017

Price & Procurement

All prices are in SGD.
Price Break Unit Price Extended Price
1 25.86000 25.86
100 24.86250 2,486.25

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